Takata Masashi, Takagi Kenichiro, Nagase Takashi, Kobayashi Takashi, Naito Hiroyoshi
J Nanosci Nanotechnol. 2016 Apr;16(4):3322-6. doi: 10.1166/jnn.2016.12289.
An analytical expression for impedance spectra in the case of double injection (both electrons and holes are injected into an organic semiconductor thin film) has been derived from the basic transport equations (the current density equation, the continuity equation and the Possion's equation). Capacitance-frequency characteristics calculated from the analytical expression have been examined at different recombination constants and different values of mobility balance defined by a ratio of electron mobility to hole mobility. Negative capacitance appears when the recombination constant is lower than the Langevin recombination constant and when the value of the mobility balance approaches unity. These results are consistent with the numerical results obtained by a device simulator (Atlas, Silvaco).
通过基本输运方程(电流密度方程、连续性方程和泊松方程)推导出了双注入(电子和空穴都注入到有机半导体薄膜中)情况下阻抗谱的解析表达式。根据该解析表达式计算得到的电容-频率特性,已在不同的复合常数以及由电子迁移率与空穴迁移率之比定义的不同迁移率平衡值下进行了研究。当复合常数低于朗之万复合常数且迁移率平衡值接近1时,会出现负电容。这些结果与器件模拟器(Atlas,Silvaco)获得的数值结果一致。