Huang Qinglin, Liu Huan, Wang Yafeng, Xiao Changfa
State Key Laboratory of Separation Membranes and Membrane Process, Tianjin Polytechnic University 399 West Binshui Road, Xiqing District Tianjin 300387 P. R. China
Department of Material Science and Engineering, Tianjin Polytechnic University Tianjin 300387 P. R. China.
RSC Adv. 2018 May 16;8(32):18084-18092. doi: 10.1039/c8ra02304b. eCollection 2018 May 14.
We proposed a novel method for vacuum membrane distillation (VMD) called Electric Field Assisted Vacuum Membrane Distillation (EVMD) that can be used to mitigate membrane fouling. A biaxial stretching polytetrafluoroethylene (PTFE) membrane was utilized as the base membrane, and multi-walled carbon nanotubes (MWCNTs) or a mixture of MWCNTs/graphene as a conductive substrate. During EVMD, the conductive PTFE membrane acted as the cathode while a stainless-steel wire mesh surrounding the conductive membrane acted as the anode. The effect of the per unit area loading mass (PUALM) of the conductive substrate on the membrane performance were investigated. Results revealed that for a PUALM of 10 g m, the PTFE membrane not only exhibited excellent conductivity but also showed a high rate of gas flux. Doping graphene into the MWCNT conductive substrate led to the formation of nano-channels which served to improve the membrane distillation flux and the membrane hydrophobicity. The effects of the electric field strength as well as humic acid (HA) concentration on the antifouling performance during EVMD were also investigated. Results showed that during EVMD, the PTFE conductive membrane exhibited the best antifouling ability using an intermittent electric field with a field strength of 1.0 V cm.
我们提出了一种用于真空膜蒸馏(VMD)的新方法,称为电场辅助真空膜蒸馏(EVMD),它可用于减轻膜污染。采用双轴拉伸聚四氟乙烯(PTFE)膜作为基膜,并使用多壁碳纳米管(MWCNT)或MWCNT/石墨烯的混合物作为导电基底。在EVMD过程中,导电PTFE膜充当阴极,而围绕导电膜的不锈钢丝网充当阳极。研究了导电基底的单位面积负载质量(PUALM)对膜性能的影响。结果表明,对于10 g/m的PUALM,PTFE膜不仅表现出优异的导电性,而且显示出高气体通量率。将石墨烯掺杂到MWCNT导电基底中导致形成纳米通道,这有助于提高膜蒸馏通量和膜疏水性。还研究了电场强度以及腐殖酸(HA)浓度对EVMD过程中抗污染性能的影响。结果表明,在EVMD过程中,PTFE导电膜在电场强度为1.0 V/cm的间歇电场下表现出最佳的抗污染能力。