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非晶硅碳膜作为锂离子电池负极的电化学特性

Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode.

作者信息

Huang X D, Zhang F, Gan X F, Huang Q A, Yang J Z, Lai P T, Tang W M

机构信息

Key Laboratory of MEMS of the Ministry of Education, Southeast University Nanjing 210096 China

School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology Nanjing 210094 China

出版信息

RSC Adv. 2018 Jan 30;8(10):5189-5196. doi: 10.1039/c7ra12463e. eCollection 2018 Jan 29.

Abstract

The electrochemical reactions of SiC film with Li have been investigated by electrochemical characterization and X-ray photoelectron spectroscopy. The SiC film is prepared by inductively-coupled-plasma chemical-vapor-deposition (ICP-CVD) technique and displays an amorphous state due to the low processing temperature (∼350 °C). An irreversible reaction of SiC with Li occurs with the formation of lithium silicon carbide (Li Si C) and elemental Si, followed by a reversible alloying/dealloying reaction of the elemental Si with Li. The 500 nm SiC film shows an initial reversible specific capacity of 917 mA h g with a capacity retention of 41.0% after 100 cycles at 0.3C charge/discharge current, and displays much better capacity retention than the Si film (5.2%). It is found that decreasing the SiC thickness effectively improves the specific capacity by enhancing the reaction kinetics but also degrades the capacity retention (for 250 nm SiC, its initial capacity is 1427 mA h g with a capacity retention of 25.7% after 100 cycles). The better capacity retention of the 500 nm SiC anode is mainly because residual SiC exists in the film due to its incomplete reaction caused by its lower reaction kinetics, and it has high hardness and can act as a buffer matrix to alleviate the anode volume change, thus improving the mechanical stability and capacity retention of the SiC anode.

摘要

通过电化学表征和X射线光电子能谱研究了SiC薄膜与锂的电化学反应。SiC薄膜采用电感耦合等离子体化学气相沉积(ICP-CVD)技术制备,由于处理温度较低(约350°C),呈现非晶态。SiC与锂发生不可逆反应,生成碳化锂硅(Li Si C)和单质硅,随后单质硅与锂发生可逆的合金化/脱合金化反应。500 nm的SiC薄膜在0.3C充放电电流下,初始可逆比容量为917 mA h g,100次循环后容量保持率为41.0%,其容量保持率比硅薄膜(5.2%)好得多。研究发现,减小SiC厚度可通过增强反应动力学有效提高比容量,但也会降低容量保持率(对于250 nm的SiC,其初始容量为1427 mA h g,100次循环后容量保持率为25.7%)。500 nm SiC负极具有更好的容量保持率,主要是因为薄膜中存在残余SiC,这是由于其较低的反应动力学导致反应不完全所致,并且它具有高硬度,可作为缓冲基体来缓解负极体积变化,从而提高SiC负极的机械稳定性和容量保持率。

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