Zhou Shangxiong, Zhang Jianhua, Fang Zhiqiang, Ning Honglong, Cai Wei, Zhu Zhennan, Liang Zhihao, Yao Rihui, Guo Dong, Peng Junbiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China
Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University Shanghai 200072 China.
RSC Adv. 2019 Dec 20;9(72):42415-42422. doi: 10.1039/c9ra06132k. eCollection 2019 Dec 18.
In this paper, a solution-processed zirconium oxide (ZrO) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures. The thermal effect of the pre-annealing and post-annealing process on the structural and electrical properties of ZrO films was investigated. The result shows that the pre-annealing process had a significant impact on the relative porosity and internal stress of ZrO film. A pre-annealing process with a low temperature could not effectively remove the residual solvent, while a high pre-annealing temperature would lead to large internal stress. As for post-annealing temperature, it was found that the post-annealing process can not only reduce internal defects of the ZrO dielectric, but also optimize the interface between the semiconductor and dielectric by lowering the surface defects of the ZrO film. Finally, the TFT with a pre-annealing temperature of 200 °C and post-annealing temperature of 400 °C showed optimized performance, with a mobility of 16.34 cm (V s), an / of 2.08 × 10, and a subthreshold swing (SS) of 0.17 V dec.
在本文中，通过旋涂法沉积了溶液处理的氧化锆（ZrO）电介质，旋涂时采用了不同的预退火温度和后退火温度。研究了预退火和后退火过程对ZrO薄膜结构和电学性能的热效应。结果表明，预退火过程对ZrO薄膜的相对孔隙率和内应力有显著影响。低温预退火过程不能有效去除残留溶剂，而高温预退火会导致较大的内应力。至于后退火温度，发现后退火过程不仅可以减少ZrO电介质的内部缺陷，还可以通过降低ZrO薄膜的表面缺陷来优化半导体与电介质之间的界面。最后，预退火温度为200℃、后退火温度为400℃的薄膜晶体管表现出优化的性能，迁移率为16.34 cm²/（V·s），Ion/Ioff为2.08×10⁷，亚阈值摆幅（SS）为0.17 V/dec。
