Cai Wei, Zhu Zhennan, Wei Jinglin, Fang Zhiqiang, Ning Honglong, Zheng Zeke, Zhou Shangxiong, Yao Rihui, Peng Junbiao, Lu Xubing
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.
Materials (Basel). 2017 Aug 21;10(8):972. doi: 10.3390/ma10080972.
Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO₂ films by intentionally increasing the concentration of precursor. The ZrO₂ films not only exhibit a low leakage current density of 10 A/cm² at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm²·V·s and a I/I ratio of 10⁶ in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO₂/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.
溶液处理的高k介电薄膜晶体管因其成本相对较低且制造工艺简单而备受关注。然而，降低溶液处理的介电薄膜晶体管的电流密度泄漏仍然是一个挑战。在此，提出了一种简单的溶液法，通过有意提高前驱体浓度来提高ZrO₂薄膜的性能。基于这些薄膜的直流脉冲溅射IGZO - TFT中，ZrO₂薄膜不仅在10 V时表现出10⁻⁶ A/cm²的低泄漏电流密度和2.5 MV/cm的击穿场强，还展现出12.6 cm²·V⁻¹·s⁻¹的饱和迁移率和10⁶的Ion/Ioff比。此外，还阐述了前驱体浓度对成膜影响的潜在机制。较高浓度的前驱体在相同涂布次数下会形成更厚的薄膜，同时减少ZrO₂/IGZO界面缺陷和粗糙度。这表明了厚度、粗糙度和退火温度在溶液处理的介电氧化物薄膜晶体管中的重要性，并提供了一种精确控制溶液处理氧化物薄膜厚度的方法。
