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通过氮掺杂和硫化镉量子点敏化增强二氧化钛纳米管的吸收:对结构的深入了解。

Enhanced absorption of TiO nanotubes by N-doping and CdS quantum dots sensitization: insight into the structure.

作者信息

Bjelajac Andjelika, Petrović Rada, Djokic Veljko, Matolin Vladimir, Vondraček Martin, Dembele Kassioge, Moldovan Simona, Ersen Ovidiu, Socol Gabriel, Mihailescu Ion N, Janaćković Djordje

机构信息

University of Belgrade, Innovation Center of Faculty of Technology and Metallurgy Karnegijeva 4 11000 Belgrade Serbia

University of Belgrade, Faculty of Technology and Metallurgy Karnegijeva 4 11000 Belgrade Serbia.

出版信息

RSC Adv. 2018 Oct 12;8(61):35073-35082. doi: 10.1039/c8ra06341a. eCollection 2018 Oct 10.

Abstract

Anodization of titanium film sputtered on fluorine doped tin oxide (FTO) glass was performed to obtain highly ordered ∼2 μm long and ∼60 nm wide TiO nanotubes. The titania films were annealed in ammonia atmosphere to enable the doping with N. The annealing did not affect the nanotubular morphology and the porosity remained open which is a very important requirement for further deposition of CdS quantum dots. The analysis done by transmission electron microscopy (TEM) has shown that the N-doped nanotubes have a smaller interplanar distance as compared to the undoped ones, whose interplanar distance corresponded to anatase phase. This difference was attributed to the N doping and the Sn migration from the substrate, as demonstrated by energy dispersive spectroscopy (EDS) combined with electron energy loss spectroscopy (EELS). The near edge X-ray absorption fine structure (NEXAFS) analysis clearly demonstrated that also the doped TiO film has anatase phase. Regarding the chemical composition of the studied samples, the X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoelectron spectroscopy (SRPES) analyses have shown that N is incorporated both interstitially and substitutionally in the TiO lattice, with a decreased contribution of the interstitial after ionic sputtering. The shift of the valence band maximum (VBM) position for the doped TiO the undoped TiO proved the narrowing of the band gap. The CdS/TiO films show bigger VBM shifting that can be attributed to CdS deposit. Comparing the absorption spectra of the bare undoped and doped TiO samples, it was noticed that the doping causes a red shift from 397 to 465 nm. Furthermore, the CdS deposition additionally enhances the absorption in the visible range (575 nm for undoped TiO/CdS and 560 nm for doped TiO/CdS films).

摘要

对溅射在氟掺杂氧化锡(FTO)玻璃上的钛膜进行阳极氧化处理,以获得高度有序的、长度约为2μm且宽度约为60nm的TiO纳米管。将二氧化钛薄膜在氨气氛中退火以实现氮掺杂。退火并未影响纳米管形态,孔隙率保持开放,这对于进一步沉积硫化镉量子点而言是一个非常重要的条件。通过透射电子显微镜(TEM)进行的分析表明,与未掺杂的纳米管相比,氮掺杂纳米管的晶面间距更小,未掺杂纳米管的晶面间距对应于锐钛矿相。如能量色散光谱(EDS)与电子能量损失谱(EELS)相结合所表明的,这种差异归因于氮掺杂和来自基底的锡迁移。近边X射线吸收精细结构(NEXAFS)分析清楚地表明,掺杂的TiO薄膜也具有锐钛矿相。关于所研究样品的化学成分,X射线光电子能谱(XPS)和同步辐射光电子能谱(SRPES)分析表明,氮以间隙方式和替代方式掺入TiO晶格中,离子溅射后间隙方式的贡献减少。掺杂TiO的价带最大值(VBM)位置相对于未掺杂TiO发生了移动,这证明了带隙变窄。CdS/TiO薄膜显示出更大的VBM移动,这可归因于CdS沉积。比较未掺杂和掺杂的TiO裸样品的吸收光谱,发现掺杂导致吸收峰从397nm红移至465nm。此外,CdS沉积进一步增强了可见光范围内的吸收(未掺杂TiO/CdS薄膜为575nm,掺杂TiO/CdS薄膜为560nm)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d0d7/9087307/5c0009ba9883/c8ra06341a-f1.jpg

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