Shao Xiuyuan, Li Shisheng, Tang Dai-Ming
Department of Physics, National University of Singapore 6 Science Drive 2 117546 Singapore
Centre for Advanced 2D Materials, National University of Singapore 2 Science Drive 3 117542 Singapore.
RSC Adv. 2018 Sep 17;8(56):32157-32163. doi: 10.1039/c8ra04639e. eCollection 2018 Sep 12.
We report chemical vapor deposition (CVD) and photoelectrochemical properties of large-area thin films of nano-crystalline SnSe on conducting FTO glass. We show that densely packed, randomly oriented SnSe nanoflakes can be grown by reacting vapors of tin monoselenide (SnSe) and selenium at 550 °C without compromising the electrical properties of FTO. We demonstrate that SnSe/FTO is photoelectrochemically active in visible to near-UV wavelengths (350-700 nm) and exhibits incident-photon-to-current-efficiency (IPCE) as high as 3.7% at 0 V the Ag/AgCl/1 M KCl reference electrode under 350 nm light illumination.
我们报道了在导电FTO玻璃上大面积纳米晶SnSe薄膜的化学气相沉积（CVD）和光电化学性质。我们表明，通过在550°C下使单硒化锡（SnSe）和硒的蒸汽反应，可以生长出紧密堆积、随机取向的SnSe纳米薄片，而不会损害FTO的电学性质。我们证明，SnSe/FTO在可见光至近紫外波长（350 - 700 nm）范围内具有光电化学活性，并且在350 nm光照下，相对于Ag/AgCl/1 M KCl参比电极，在0 V时表现出高达3.7%的入射光子到电流效率（IPCE）。
