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具有微米级晶粒的全无机卤化铅钙钛矿CsPbBr薄膜的低缺陷、大面积和高稳定性,用于自驱动光电探测器的热喷涂工艺。

Low defects, large area and high stability of all-inorganic lead halide perovskite CsPbBr thin films with micron-grains heat-spraying process for self-driven photodetector.

作者信息

Zhou Huawei, Fan Lin, He Guohang, Yuan Cang, Wang Yunying, Shi Shaozhen, Sui Ning, Chen Baoli, Zhang Yingtian, Yao Qingxia, Zhao Jinsheng, Zhang Xianxi, Yin Jie

机构信息

School of Chemistry and Chemical Engineering, College of Materials Science and Engineering, Liaocheng University, Shandong Provincial Key Laboratory of Chemical Energy Storage and Novel Cell Technology Liaocheng 252000 China

College of Materials Science and Engineering, Qingdao University of Science and Technology Qingdao 266042 China.

出版信息

RSC Adv. 2018 Aug 15;8(51):29089-29095. doi: 10.1039/c8ra04558e. eCollection 2018 Aug 14.

Abstract

All-inorganic lead halide perovskite CsPbBr has important applications in photoelectronic devices such as photodetectors, LEDs and photovoltaic devices. However, preparing high-quality CsPbBr thin films has proven to be challenging. In this study, we prepared all-inorganic lead halide perovskite CsPbBr thin films with micron-grains (MG-CsPbBr-TF) a heat-spraying process (HSP) using a CsPbBr-saturated solution (CsPbBr-SS), and the films exhibited large area, low defects and high stability. The grain size of MG-CsPbBr-TF was about 1-5 microns. The micron-sized grains in MG-CsPbBr-TF enabled the absorption cutoff edge to be extended from 537 to 545 nm. In addition, the presence of fewer boundaries in MG-CsPbBr-TF reduced the defects in MG-CsPbBr-TF (the blue shift of luminescence). The response wavelengths of a low-cost and self-driven (zero-biased) photodetector based on MG-CsPbBr-TF were from 330 to 600 nm. CsPbBr thin films having a large area (10 cm × 10 cm) and micron-sized grains were also prepared by HSP and exhibited excellent stability (1944 h) in air ( = 298 K, 40% humidity). To the best of our knowledge, this is the first study of high-quality CsPbBr thin films prepared by HSP. The results are of great interest for both fundamental research and practical applications of CsPbBr in photodetectors, LEDs and photovoltaic devices.

摘要

全无机铅卤化物钙钛矿CsPbBr在光电探测器、发光二极管和光伏器件等光电器件中具有重要应用。然而,制备高质量的CsPbBr薄膜已被证明具有挑战性。在本研究中,我们使用CsPbBr饱和溶液(CsPbBr-SS)通过热喷涂工艺(HSP)制备了具有微米级晶粒的全无机铅卤化物钙钛矿CsPbBr薄膜(MG-CsPbBr-TF),该薄膜具有大面积、低缺陷和高稳定性。MG-CsPbBr-TF的晶粒尺寸约为1-5微米。MG-CsPbBr-TF中的微米级晶粒使吸收截止边缘从537纳米扩展到545纳米。此外,MG-CsPbBr-TF中较少的晶界减少了MG-CsPbBr-TF中的缺陷(发光蓝移)。基于MG-CsPbBr-TF的低成本自驱动(零偏置)光电探测器的响应波长为330至600纳米。通过HSP还制备了大面积(10厘米×10厘米)且具有微米级晶粒的CsPbBr薄膜,该薄膜在空气中( = 298 K,40%湿度)表现出优异的稳定性(1944小时)。据我们所知,这是首次关于通过HSP制备高质量CsPbBr薄膜的研究。这些结果对于CsPbBr在光电探测器、发光二极管和光伏器件中的基础研究和实际应用都具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6988/9084415/b9138c6a756c/c8ra04558e-f1.jpg

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