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陶瓷涂层垂直排列碳纳米管阵列中接触电阻的表征

Characterization of contact resistances in ceramic-coated vertically aligned carbon nanotube arrays.

作者信息

Li Meng, Yang Ning, Wood Vanessa, Park Hyung Gyu

机构信息

Department of Mechanical and Process Engineering, ETH Zürich Zürich CH-8092 Switzerland

Department of Information Technology and Electrical Engineering, ETH Zürich Zürich CH-8092 Switzerland

出版信息

RSC Adv. 2019 Mar 4;9(13):7266-7275. doi: 10.1039/c8ra10519g. eCollection 2019 Mar 1.

Abstract

Despite the technological significance of carbon nanotube (CNT) arrays and metal-oxide coated CNTs for electronic and electrochemical devices such as supercapacitors, lithium-ion batteries, and solar-chemical cells, sub-optimal device performance often results due to large contact resistance between the CNTs and the metallic current collectors or between the CNTs and their ceramic coatings. While contact resistance measurements are regularly carried out on individually contacted CNTs, contact resistance measurements on vertically aligned (VA) CNT arrays are not routine. Here, we demonstrate that two-probe electrical current-voltage measurements and electrochemical impedance spectroscopy can be used to probe the end contact resistance and side contact resistances of coated and uncoated VACNT arrays in order to optimize material deposition and selection.

摘要

尽管碳纳米管(CNT)阵列和金属氧化物涂层碳纳米管对于诸如超级电容器、锂离子电池和太阳能化学电池等电子和电化学装置具有技术意义,但由于碳纳米管与金属集流体之间或碳纳米管与其陶瓷涂层之间存在较大的接触电阻,常常导致器件性能欠佳。虽然对单个接触的碳纳米管经常进行接触电阻测量,但对垂直排列(VA)的碳纳米管阵列进行接触电阻测量却并非常规操作。在此,我们证明双探针电流-电压测量和电化学阻抗谱可用于探测涂层和未涂层的垂直排列碳纳米管阵列的端部接触电阻和侧面接触电阻,以便优化材料沉积和选择。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1196/9087477/01e7fbe1de4e/c8ra10519g-f1.jpg

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