Ghosh Subir, Sadaf Muhtasim Ul Karim, Graves Andrew R, Zheng Yikai, Pannone Andrew, Ray Samriddha, Cheng Chung-Yu, Guevara Jeremy, Redwing Joan M, Das Saptarshi
Engineering Science and Mechanics, Penn State University, University Park, PA, USA.
2D Crystal Consortium Materials Innovation Platform, Penn State University, University Park, PA, USA.
Nat Commun. 2025 Jul 1;16(1):5649. doi: 10.1038/s41467-025-59684-4.
Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has remained challenging, hindering the development of fully integrated 2D complementary metal-oxide-semiconductor (CMOS) technology. Here, we present p-type 2D FETs based on bilayer WSe synthesized via an industry-compatible metal-organic chemical vapor deposition (MOCVD) process. These devices achieve on-state current as high as 421 μA/μm at a drain voltage of 1 V and a gate overdrive voltage of 2.5 V, an on/off current ratio exceeding 10, and a subthreshold swing as low as 75 mV/decade. Key device parameters include a contact resistance down to 1.3 kΩ-µm, a field-effect hole mobility of 16.1 cmVs, and a peak transconductance of 250 µS/µm. This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate dielectric with an equivalent oxide thickness of ~2.3 nm, and analyzed over 300 devices. We also investigated the temporal and thermal stability of p-type doping, providing insights into the underlying NO doping mechanism. Our findings help to address a long-standing challenge in 2D materials research and offer a promising solution to realize high-performance p-type 2D FETs for future CMOS applications.
二维（2D）材料是下一代电子产品的理想候选材料，但高性能p型二维场效应晶体管（FET）的实现仍然具有挑战性，这阻碍了全集成二维互补金属氧化物半导体（CMOS）技术的发展。在此，我们展示了基于通过工业兼容的金属有机化学气相沉积（MOCVD）工艺合成的双层WSe的p型二维FET。这些器件在1 V的漏极电压和2.5 V的栅极过驱动电压下实现了高达421 μA/μm的导通电流、超过10的开/关电流比以及低至75 mV/十倍频程的亚阈值摆幅。关键器件参数包括低至1.3 kΩ-µm的接触电阻、16.1 cm²V⁻¹s⁻¹的场效应空穴迁移率以及250 µS/µm的峰值跨导。这种高性能是通过在100°C下用一氧化氮（NO）处理30分钟进行p型掺杂实现的。此外，我们将沟道长度缩小至50 nm，集成了等效氧化层厚度约为2.3 nm的高κ栅极电介质，并对300多个器件进行了分析。我们还研究了p型掺杂的时间和热稳定性，深入了解了潜在的NO掺杂机制。我们的研究结果有助于解决二维材料研究中长期存在的挑战，并为实现用于未来CMOS应用的高性能p型二维FET提供了一个有前景的解决方案。
