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亚乙烯基与苯并[][1,2,5]噻二唑:π-间隔单元对用于n沟道有机场效应晶体管的含苯并二呋喃二酮的双(2-氧代吲哚啉-3-亚基)聚合物性能的影响

Vinylene and benzo[][1,2,5]thiadiazole: effect of the π-spacer unit on the properties of bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing polymers for n-channel organic field-effect transistors.

作者信息

Do Thu Trang, Patil Basanagouda B, Singh Samarendra P, Yambem Soniya D, Feron Krishna, Ostrikov Kostya Ken, Bell John M, Sonar Prashant

机构信息

School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT) 2 George Street Brisbane QLD-4001 Australia

Department of Physics, School of Natural Sciences, Shiv Nadar University (SNU) Gautam Buddha Nagar Uttar Pradesh India-201307.

出版信息

RSC Adv. 2018 Nov 20;8(68):38919-38928. doi: 10.1039/c8ra08890j. eCollection 2018 Nov 16.

DOI:10.1039/c8ra08890j
PMID:35558294
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9090616/
Abstract

Two polymers based on (3,7)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-:4,5-']difuran-2,6(3,7)-dione (BIBDF) coupled with ()-2-(2-(thiophen-2-yl)vinyl)thiophene (TVT) or dithienylbenzothiadiazole (TBT), namely PBIBDF-TVT and PBIBDF-TBT were synthesized the Stille coupling reaction. The effect of benzothiadiazole or vinylene-π spacer of the copolymers on optical properties, energy levels, electronic device performance and microstructure were studied. It was found that PBIBDF-TBT based OFET devices, annealed at 180 °C, showed better performance with the highest electron mobility of 2.9 × 10 cm V s whereas PBIBDF-TVT polymer exhibited 5.0 × 10 cm V s. The two orders of magnitude higher electron mobility of PBIBDF-TBT over PBIBDT-TVT is a clear indicator of the better charge transport ability of this polymer semiconductor arising from its higher crystallinity and better donor-acceptor interaction.

摘要

基于(3,7)-3,7-双(2-氧代吲哚啉-3-亚基)苯并[1,2-:4,5-']二呋喃-2,6(3,7)-二酮(BIBDF)与()-2-(2-(噻吩-2-基)乙烯基)噻吩(TVT)或二噻吩基苯并噻二唑(TBT)偶联的两种聚合物,即PBIBDF-TVT和PBIBDF-TBT,通过Stille偶联反应合成。研究了共聚物中苯并噻二唑或亚乙烯基-π间隔基对光学性质、能级、电子器件性能和微观结构的影响。结果发现,在180℃退火的基于PBIBDF-TBT的有机场效应晶体管器件表现出更好的性能,最高电子迁移率为2.9×10 cm V s,而PBIBDF-TVT聚合物的电子迁移率为5.0×10 cm V s。PBIBDF-TBT的电子迁移率比PBIBDT-TVT高两个数量级,这清楚地表明该聚合物半导体由于其更高的结晶度和更好的供体-受体相互作用而具有更好的电荷传输能力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/55a95ac38164/c8ra08890j-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/99c715ff8379/c8ra08890j-s1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/ba8af57cc749/c8ra08890j-s2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/389c5b85e95c/c8ra08890j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/8fbb5008590f/c8ra08890j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/81b1a9a9c15d/c8ra08890j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/ac157d86fc6e/c8ra08890j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/9e23c5f92828/c8ra08890j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/03d5ee72f01d/c8ra08890j-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/55a95ac38164/c8ra08890j-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/99c715ff8379/c8ra08890j-s1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/ba8af57cc749/c8ra08890j-s2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/389c5b85e95c/c8ra08890j-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/8fbb5008590f/c8ra08890j-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/81b1a9a9c15d/c8ra08890j-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/ac157d86fc6e/c8ra08890j-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/9e23c5f92828/c8ra08890j-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/03d5ee72f01d/c8ra08890j-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a52a/9090616/55a95ac38164/c8ra08890j-f7.jpg

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