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CoFeO/SrRuO/(Pb(MgNb)O-PbTiO)异质结构有序纳米磁体中的应变辅助磁电耦合

Strain assisted magnetoelectric coupling in ordered nanomagnets of CoFeO/SrRuO/(Pb(MgNb)O-PbTiO) heterostructures.

作者信息

Ahlawat Anju, Khan Azam Ali, Deshmukh Pratik, Bhartiya Sushmita, Satapathy S, Shirolkar Mandar M, Wang Haiqian, Choudhary R J

机构信息

UGC-DAE Consortium for Scientific Research, Indore, India.

Laser Biomedical Applications Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, India.

出版信息

J Phys Condens Matter. 2022 May 30;34(30). doi: 10.1088/1361-648X/ac6fa6.

Abstract

We have explored the electric field controlled magnetization in the nanodot CoFeO/SrRuO/PMN-PT (CFO/SRO/PMN-PT) heterostructures. Ordered ferromagnetic CFO nanodots (∼300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well as piezoelectric) using a nanostencil-mask pattering method during pulsed laser deposition. The nanostructures reveal electric field induced magnetization reversal in the single domain CFO nanodots through transfer of piezostrains from the piezoelectric PMN-PT substrate to the CFO. Further, electric field modulated spin structure of CFO nanomagnets is analyzed by using x-ray magnetic circular dichroism (XMCD). The XMCD analysis reveals cations (Fe/Co) redistribution on the octahedral and tetrahedral site in the electric field poled CFO nanodots, establishing the strain induced magneto-electric coupling effects. The CFO/SRO/PMN-PT nanodots structure demonstrate multilevel switching of ME coupling coefficient () by applying selective positive and negative electric fields in a non-volatile manner. The retention of two stable states ofis illustrated for ∼10seconds, which can be employed to store the digital data in non-volatile memory devices. Thus the voltage controlled magnetization in the nanodot structures leads a path towards the invention of energy efficient high-density memory devices.

摘要

我们研究了纳米点CoFeO/SrRuO/PMN-PT(CFO/SRO/PMN-PT)异质结构中的电场控制磁化。在脉冲激光沉积过程中,使用纳米模板掩模图案化方法,在PMN-PT衬底(铁电体以及压电体)上制备了有序的铁磁CFO纳米点(横向尺寸约300 nm)。这些纳米结构通过压应变从压电PMN-PT衬底转移到CFO,揭示了单畴CFO纳米点中电场诱导的磁化反转。此外,利用x射线磁圆二色性(XMCD)分析了CFO纳米磁体的电场调制自旋结构。XMCD分析揭示了电场极化的CFO纳米点中阳离子(Fe/Co)在八面体和四面体位置上的重新分布,证实了应变诱导的磁电耦合效应。CFO/SRO/PMN-PT纳米点结构通过以非易失性方式施加选择性正电场和负电场,展示了磁电耦合系数()的多级切换。的两个稳定状态的保持时间约为10秒,这可用于在非易失性存储器件中存储数字数据。因此,纳米点结构中的电压控制磁化通向了发明节能型高密度存储器件的道路。

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