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基于在光子纳米天线中具有(In)GaAs不对称势垒的InAs量子点的用于电信O波段的明亮单光子源。

Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna.

作者信息

Rakhlin Maxim, Klimko Grigorii, Sorokin Sergey, Kulagina Marina, Zadiranov Yurii, Kazanov Dmitrii, Shubina Tatiana, Ivanov Sergey, Toropov Alexey

机构信息

Ioffe Institute, 194021 St. Petersburg, Russia.

出版信息

Nanomaterials (Basel). 2022 May 5;12(9):1562. doi: 10.3390/nano12091562.

Abstract

We report on single-photon emitters for the telecommunication O-band (1260-1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. The implemented design of the barriers provides a shift in the quantum dot radiation wavelength towards the O-band, while the nanoantenna collects the radiation and ensures its effective output. With non-resonant optical pumping, the average count rate of emitted single photons exceeds 10 MHz with the second-order correlation function g(2)(0) = 0.18 at 8 K.

摘要

我们报道了用于电信O波段(1260 - 1360纳米)的单光子发射器,其由具有不对称势垒的InAs/(In)GaAs量子点组成,该量子点置于充当光子纳米天线的半导体锥形纳米柱内。势垒的设计使得量子点辐射波长向O波段偏移,同时纳米天线收集辐射并确保其有效输出。在非共振光泵浦下,发射的单光子平均计数率超过10 MHz,在8 K时二阶关联函数g(2)(0) = 0.18。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac42/9104217/38a253512e44/nanomaterials-12-01562-g001.jpg

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