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热增强垂直形状各向异性自旋转移力矩磁性随机存取存储器纳米柱的定量可视化

Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars.

作者信息

Almeida Trevor P, Lequeux Steven, Palomino Alvaro, Sousa Ricardo C, Fruchart Olivier, Prejbeanu Ioan-Lucian, Dieny Bernard, Masseboeuf Aurélien, Cooper David

机构信息

University of Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France.

SUPA, School of Physics and Astronomy, University of Glasgow, Glascow G12 8QQ, United Kingdom.

出版信息

Nano Lett. 2022 May 25;22(10):4000-4005. doi: 10.1021/acs.nanolett.2c00597. Epub 2022 May 16.

DOI:10.1021/acs.nanolett.2c00597
PMID:35576455
Abstract

Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modeling. Here, the magnetism of a NiFe PSA-STT-MRAM nanopillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (∼60 nm high, ≤20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. heating demonstrates that the PSA of the storage layer is maintained up to at least 250 °C, and direct quantitative measurements reveal a moderate decrease of magnetic induction. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures.

摘要

垂直形状各向异性(PSA)为在低于20纳米技术节点的情况下缩小自旋转移矩磁阻随机存取存储器(STT-MRAM)规模提供了一种切实可行的解决方案,同时保持热稳定性。然而,我们对PSA-STT-MRAM热磁行为的理解往往是间接的,依赖于磁阻测量和微磁建模。在此,利用离轴电子全息术研究了NiFe PSA-STT-MRAM纳米柱的磁性,提供了作为温度函数的空间分辨磁信息。磁感应图揭示了NiFe存储层(约60纳米高,直径≤20纳米)的微磁结构,证实了由其3:1的纵横比引起的PSA。加热表明存储层的PSA至少在250°C时仍能保持,直接定量测量显示磁感应有适度下降。因此,本研究明确表明,PSA在需要在一系列工作温度下具有可靠性能的STT-MRAM应用中提供了显著的稳定性。

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