Oglesby Skyler, Ivanov Sergei A, Londonõ-Calderon Alejandra, Pete Douglas, Pettes Michael Thompson, Jones Andrew Crandall, Chabi Sakineh
Department of Mechanical Engineering, University of New Mexico, Albuquerque, NM 87131, USA.
Materials Physics and Application Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Materials (Basel). 2022 May 12;15(10):3475. doi: 10.3390/ma15103475.
This paper reports on the manufacturing of complex three-dimensional Si/C structures via a chemical vapor deposition method. The structure and properties of the grown materials were characterized using various techniques including scanning electron microscopy, aberration-corrected transmission electron microscopy, confocal Raman spectroscopy, and X-ray photoelectron spectroscopy. The spectroscopy results revealed that the grown materials were composed of micro/nanostructures with various compositions and dimensions. These included two-dimensional silicon carbide (SiC), cubic silicon, and various SiC polytypes. The coexistence of these phases at the nano-level and their interfaces can benefit several Si/C-based applications ranging from ceramics and structural applications to power electronics, aerospace, and high-temperature applications. With an average density of 7 mg/cm, the grown materials can be considered ultralightweight, as they are three orders of magnitude lighter than bulk Si/C materials. This study aims to impact how ceramic materials are manufactured, which may lead to the design of new carbide materials or Si/C-based lightweight structures with additional functionalities and desired properties.
本文报道了通过化学气相沉积法制造复杂三维硅碳结构的过程。使用包括扫描电子显微镜、像差校正透射电子显微镜、共焦拉曼光谱和X射线光电子能谱在内的各种技术对生长材料的结构和性能进行了表征。光谱结果表明，生长材料由具有不同组成和尺寸的微/纳米结构组成。这些结构包括二维碳化硅（SiC）、立方硅和各种SiC多型体。这些相在纳米级的共存及其界面有利于多种基于硅碳的应用，从陶瓷和结构应用到电力电子、航空航天和高温应用。生长材料的平均密度为7 mg/cm，可被视为超轻材料，因为它们比块状硅碳材料轻三个数量级。本研究旨在影响陶瓷材料的制造方式，这可能会导致设计出具有附加功能和所需性能的新型碳化物材料或基于硅碳的轻质结构。
