Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA.
IMEC, Leuven, Belgium.
Nature. 2019 Sep;573(7775):507-518. doi: 10.1038/s41586-019-1573-9. Epub 2019 Sep 25.
The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.
硅半导体技术的发展在电子学领域取得了突破——从上世纪 60 年代末到 70 年代初的微处理器,到自动化、计算机和智能手机——通过将设备和电线的物理尺寸缩小到纳米尺度。现在,石墨烯和相关的二维(2D)材料有望在原子极限下实现前所未有的器件性能进步,而 2D 材料与硅芯片的协同组合有望提供一个异构平台,基于硅技术实现潜在的巨大增强。通过多功能高层 2D 硅芯片的三维整体构建实现集成,通过利用垂直方向和硅平台的功能多样化来实现增强的性能,适用于光电子学和传感应用。在这里,我们回顾了将原子层薄材料与基于硅的纳米系统集成的机会、进展和挑战,同时也考虑了计算和非计算应用的前景。