Zhou Peigen, Wang Chen, Sun Jin, Chen Zhe, Chen Jixin, Hong Wei
State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing 210096, China.
Micromachines (Basel). 2022 May 23;13(5):809. doi: 10.3390/mi13050809.
In this study, we developed a single-channel channel emulator module with an operating frequency covering 66-67 GHz, including a 66-76 GHz wide dynamic range monolithic integrated circuit designed based on 0.1 µm pHEMT GaAs process, a printed circuit board (PCB) power supply bias network, and low-loss ridge microstrip line to WR12 (60-90 GHz) waveguide transition structure. Benefiting from the on-chip multistage band-pass filter integrated at the local oscillator (LO) and radio frequency (RF) ends, the module's spurious components at the RF port were greatly suppressed, making the module's output power dynamic range over 50 dB. Due to the frequency-selective filter integrated in the LO chain, each clutter suppression in the LO chain exceeds 40 dBc. Up and down conversion loss of the module is better than 14 dB over the 66-67 GHz band, the measured IF input P1 dB is better than 10 dBm, and the module consumes 129 mA from a 5 V low dropout supply. A low-loss ridged waveguide ladder transition was designed (less than 0.4 dB) so that the output interface of the module is a WR12 waveguide interface, which is convenient for direct connection with an instrument with E-band (60-90 GHz) waveguide interface.
在本研究中，我们开发了一种工作频率覆盖66 - 67 GHz的单通道信道模拟器模块，包括基于0.1 µm pHEMT GaAs工艺设计的66 - 76 GHz宽动态范围单片集成电路、印刷电路板（PCB）电源偏置网络以及低损耗脊形微带线到WR12（60 - 90 GHz）波导的过渡结构。受益于集成在本地振荡器（LO）和射频（RF）端的片上多级带通滤波器，该模块射频端口的杂散分量得到了极大抑制，使得模块的输出功率动态范围超过50 dB。由于在LO链中集成了频率选择滤波器，LO链中的每个杂波抑制超过40 dBc。该模块在66 - 67 GHz频段的上下变频损耗优于14 dB，测得的中频输入P1 dB优于10 dBm，并且该模块从5 V低压差电源消耗129 mA电流。设计了一种低损耗脊形波导阶梯过渡（小于0.4 dB），使得模块的输出接口为WR12波导接口，便于直接与具有E波段（60 - 90 GHz）波导接口的仪器连接。
