Institute for Applied Microelectronics (IUMA), Department of Electronics and Automatic Engineering, University of Las Palmas de Gran Canaria (ULPGC), Campus Universitario de Tafira, 35017 Las Palmas de Gran Canaria, Spain.
Sensors (Basel). 2023 Jan 12;23(2):867. doi: 10.3390/s23020867.
A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit is designed to cover the 5G New Release n258 frequency band (24.25-27.58 GHz). Momentum EM post-layout simulations reveal the circuit achieves a minimum NF of 1.3 dB, a maximum gain of 34 dB, || better than -10 dB from 23 GHz to 29 GHz, a of -18 dBm and an OIP3 of 24.5 dBm. The LNA draws a total current of 59.1 mA from a 2 V DC supply and results in a chip size of 3300 × 1800 µm including pads. We present a design methodology focused on the selection of the active device size and DC bias conditions to obtain the lowest NF when source degeneration is applied. The design procedure ensures a minimum NF design by selecting a device which facilitates a simple input matching network implementation and obtains a reasonable input return loss thanks to the application of source degeneration. With this approach the input matching network is implemented with a shunt stub and a transmission line, therefore minimizing the contribution to the NF achieved by the first stage. Comparisons with similar works demonstrate the developed circuit is very competitive with most of the state-of-the-art solutions.
提出了一种采用 UMS100nmGaAs pHEMT 工艺的 1.4dB 噪声系数（NF）四阶 K 波段单片微波集成电路（MMIC）低噪声放大器（LNA）。所提出的电路旨在覆盖 5G 新发布 n258 频段（24.25-27.58GHz）。动量 EM 后布局仿真表明，该电路实现了 1.3dB 的最小 NF、34dB 的最大增益、|| 在 23GHz 至 29GHz 范围内优于-10dB、-18dBm 的 和 24.5dBm 的 OIP3。LNA 从 2V DC 电源汲取总电流为 59.1mA，芯片尺寸为 3300×1800μm，包括焊盘。我们提出了一种专注于选择有源器件尺寸和直流偏置条件的设计方法，以在源退化应用时获得最低的 NF。设计过程通过选择有利于实现简单输入匹配网络实现的器件并由于源退化的应用而获得合理的输入回波损耗来确保最小 NF 设计。通过这种方法，输入匹配网络采用并联短截线和传输线实现，从而最大限度地减少了第一级对 NF 贡献。与类似工作的比较表明，所开发的电路与大多数最先进的解决方案非常具有竞争力。
