具有10纳秒死区时间且在自由运行的穿透型单光子雪崩二极管中具有低后脉冲现象。

10-nanosecond dead time and low afterpulsing with a free-running reach-through single-photon avalanche diode.

作者信息

Farina S, Labanca I, Acconcia G, Ghioni M, Rech I

机构信息

Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy.

出版信息

Rev Sci Instrum. 2022 May 1;93(5):053102. doi: 10.1063/5.0086312.

DOI:10.1063/5.0086312

PMID:35649792

Abstract

The reduction of detector dead time represents an enabling factor in several photon counting applications. In this work, we investigate the free-running operation of reach-through single-photon avalanche diodes (SPADs) at ultra-low dead times. By employing a fast active quenching circuit with direct bonding to the detector, we are able to achieve a 10 ns dead time with a thick SPAD by Excelitas, still maintaining extremely low afterpulsing probabilities (below 1.5%).

摘要

探测器死时间的减少是多个光子计数应用中的一个促成因素。在这项工作中，我们研究了直通型单光子雪崩二极管（SPAD）在超短死时间下的自由运行操作。通过采用直接与探测器相连的快速有源猝灭电路，我们能够使Excelitas公司的厚型SPAD实现10纳秒的死时间，同时仍保持极低的后脉冲概率（低于1.5%）。