Multiscale simulation analysis of passive and active micro/nanoelectrodes for CMOS-based neural sensing devices.

Neuron and neural network studies are remarkably fostered by novel stimulation and recording systems, which often make use of biochips fabricated with advanced electronic technologies and, notably, micro- and nanoscale complementary metal-oxide semiconductor (CMOS). Models of the transduction mechanisms involved in the sensor and recording of the neuron activity are useful to optimize the sensing device architecture and its coupling to the readout circuits, as well as to interpret the measured data. Starting with an overview of recently published integrated active and passive micro/nanoelectrode sensing devices for studies fabricated with modern (CMOS-based) micro-nano technology, this paper presents a mixed-mode device-circuit numerical-analytical multiscale and multiphysics simulation methodology to describe the neuron-sensor coupling, suitable to derive useful design guidelines. A few representative structures and coupling conditions are analysed in more detail in terms of the most relevant electrical figures of merit including signal-to-noise ratio. This article is part of the theme issue 'Advanced neurotechnologies: translating innovation for health and well-being'.