Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan.
Sensors (Basel). 2010;10(3):1753-64. doi: 10.3390/s100301753. Epub 2010 Mar 3.
The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.
本研究提出了一种微一氧化碳(CO)传感器,该传感器与通过商业 0.35μm 互补金属氧化物半导体(CMOS)工艺和后处理制造的读出电路集成在一个芯片上。传感器的传感膜是通过沉淀氧化法制备的复合氧化钴纳米片和碳纳米管(CoOOH/CNT)膜。CO 传感器的结构由多晶硅电阻器和传感膜组成。当传感膜吸附或解吸 CO 气体时,电阻型传感器会改变其电阻。读出电路用于将传感器电阻转换为电压输出。传感器的后处理包括刻蚀牺牲层和涂覆传感膜。该传感器的优点包括在室温下工作、响应和恢复时间短以及易于后处理。实验结果表明,CO 传感器的灵敏度约为 0.19 mV/ppm,对于 200 ppm CO,响应和恢复时间分别为 23s 和 34s。