通过双波长多量子阱实现单芯片白光氮化铟镓发光二极管

Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells.

作者信息

Li Yangfeng, Liu Cui, Zhang Yuli, Jiang Yang, Hu Xiaotao, Song Yimeng, Su Zhaole, Jia Haiqiang, Wang Wenxin, Chen Hong

机构信息

Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Materials (Basel). 2022 Jun 3;15(11):3998. doi: 10.3390/ma15113998.

DOI:10.3390/ma15113998

PMID:35683296

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9181966/

Abstract

Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays and other related fields. Here, we demonstrate a single chip white light indium gallium nitride (InGaN) LED via the manipulation of the dual-wavelength MQWs. The MQWs contain four pairs of blue light-emitting MQWs and one pair of green light-emitting QW. The fabricated LED chips with nickel/gold (Ni/Au) as the current spreading layer emit white light with the injection current changing from 0.5 mA to 80 mA. The chromaticity coordinates of (0.3152, 0.329) closing to the white light location in the Commission International de I'Eclairage (CIE) 1931 chromaticity diagram are obtained under a 1 mA current injection with a color rendering index (CRI) Ra of 60 and correlated color temperature (CCT) of 6246 K. This strategy provides a promising route to realize high quality white light in a single chip, which will significantly simplify the production process of incumbent white light LEDs and promote the progress of high-quality illumination.

摘要

双波长多量子阱（MQW）在实现高质量照明、单片微发光二极管（LED）显示器及其他相关领域具有巨大潜力。在此，我们通过对双波长多量子阱的调控展示了一种单芯片白光氮化铟镓（InGaN）发光二极管。该多量子阱包含四对蓝光发射多量子阱和一对绿光发射量子阱。所制备的以镍/金（Ni/Au）作为电流扩展层的发光二极管芯片，在注入电流从0.5 mA变化到80 mA时发射白光。在1 mA电流注入下，获得了色坐标为(0.3152, 0.329)，接近国际照明委员会（CIE）1931色度图中的白光位置，显色指数（CRI）Ra为60，相关色温（CCT）为6246 K。该策略为在单芯片中实现高质量白光提供了一条有前景的途径，这将显著简化现有白光发光二极管的生产工艺并推动高质量照明的发展。