Lam Weng Hoe, Lam Weng Siew, Lee Pei Fun
Department of Physical and Mathematical Science, Faculty of Science, Universiti Tunku Abdul Rahman, Kampar Campus, Jalan Universiti, Bandar Barat, Kampar 31900, Perak, Malaysia.
Materials (Basel). 2023 Jan 1;16(1):401. doi: 10.3390/ma16010401.
Gallium nitride (GaN) has a wide energy band gap and a high power density, efficiency, switching frequency, and electron carrier mobility, having broad applications in digitization. Because GaN has high potentials, this study performed a bibliometric analysis on the publications of GaN indexed in the Web of Science database from 1970 to 2023. A performance analysis of the 15,634 publications was performed using Harzing's Publish or Perish tool, while science mappings were performed with VOSviewer software. The results show that there has been an uptrend in the on-going research on GaN, especially in the past decade. Most of the documents are within the fields of physics, engineering, and materials science. The United States has the highest number of publications and the most impactful research. The United States is also actively collaborating with other countries to gain deeper insights into GaN. The analysis shows that the concentration of GaN research is slowly moving towards the development of high-voltage operations.
氮化镓（GaN）具有宽带隙、高功率密度、效率、开关频率和电子载流子迁移率，在数字化领域有广泛应用。由于氮化镓具有很高的潜力，本研究对1970年至2023年科学网数据库中索引的氮化镓出版物进行了文献计量分析。使用哈津的“发表或灭亡”工具对15634篇出版物进行了绩效分析，同时使用VOSviewer软件进行了科学映射。结果表明，氮化镓的正在进行的研究呈上升趋势，尤其是在过去十年。大多数文献属于物理、工程和材料科学领域。美国的出版物数量最多，研究影响力最大。美国也在积极与其他国家合作，以更深入地了解氮化镓。分析表明，氮化镓研究的重点正在慢慢转向高压操作的开发。
