Park Gun, Choi Youngwoo, Shin Sunyoung, Lee Yongju, Hong Seungbum
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
LG Energy Solution, 188, Moonji-ro, Yuseong-gu, Daejeon 34122, Republic of Korea.
ACS Appl Mater Interfaces. 2022 Jul 13;14(27):30639-30648. doi: 10.1021/acsami.2c01460. Epub 2022 Jun 22.
Conductive atomic force microscopy (C-AFM) is widely used to determine the electronic conductivity of a sample surface with nanoscale spatial resolution. However, the origin of possible artifacts has not been widely researched, hindering the accurate and reliable interpretation of C-AFM imaging results. Herein, artifact-free C-AFM is used to observe the electron conduction channels in Si-based composite anodes. The origin of a typical C-AFM artifact induced by surface morphology is investigated using a relevant statistical method that enables visualization of the contribution of artifacts in each C-AFM image. The artifact is suppressed by polishing the sample surface using a cooling cross-section polisher, which is confirmed by Pearson correlation analysis. The artifact-free C-AFM image was used to compare the current signals (before and after cycling) from two different composite anodes comprising single-walled carbon nanotubes (SWCNTs) and carbon black as conductive additives. The relationship between the electrical degradation and morphological evolution of the active materials depending on the conductive additive is discussed to explain the improved electrical and electrochemical properties of the electrode containing SWCNTs.
导电原子力显微镜(C-AFM)被广泛用于以纳米级空间分辨率测定样品表面的电子电导率。然而,可能的假象来源尚未得到广泛研究,这阻碍了对C-AFM成像结果的准确可靠解读。在此,使用无假象的C-AFM来观察硅基复合负极中的电子传导通道。使用一种相关统计方法研究了由表面形貌引起的典型C-AFM假象的来源,该方法能够可视化每个C-AFM图像中假象的贡献。通过使用冷却截面抛光机对样品表面进行抛光来抑制假象,这通过皮尔逊相关分析得到了证实。使用无假象的C-AFM图像比较了来自两种不同复合负极(包含单壁碳纳米管(SWCNT)和炭黑作为导电添加剂)的电流信号(循环前后)。讨论了取决于导电添加剂的活性材料的电降解与形态演变之间的关系,以解释含SWCNT电极改善的电学和电化学性能。