Cui Xiaoqi, Du Mingde, Das Susobhan, Yoon Hoon Hahn, Pelgrin Vincent Yves, Li Diao, Sun Zhipei
Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland.
Nanoscale. 2022 Jul 7;14(26):9459-9465. doi: 10.1039/d2nr01042a.
During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (, silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials. On-chip light propagation, emission, and detection are demonstrated by taking advantage of different van der Waals materials. Low-loss passive waveguides with MoS and on-chip light sources and photodetectors with InSe have been realised. Our proof-of-concept demonstration of passive and active on-chip photonic components endorses van der Waals materials for offering a new dielectric platform with a large material-selection degree of freedom and unique properties toward close-to-atomic scale manufacture of on-chip photonic and optoelectronic devices.
在过去几十年里,光子集成电路急剧增加,推动了许多高性能应用,如片上传感、数据处理和芯片间通信。目前占主导地位的材料平台(硅、氮化硅、铌酸锂和磷化铟)虽已取得巨大的应用成功,但也有自身的缺点,比如硅的间接带隙不利于高效发光,以及磷化铟与硅产业的兼容性挑战。在此,我们报道一种使用纳米结构块状范德华材料的新型介电平台。利用不同的范德华材料实现了片上光传播、发射和检测。已实现了具有二硫化钼的低损耗无源波导以及具有硒化铟的片上光源和光电探测器。我们对无源和有源片上光子元件的概念验证演示支持了范德华材料,因为它能提供一个具有很大材料选择自由度且具有独特性质的新型介电平台,有助于接近原子尺度制造片上光子和光电器件。