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用于克服光子集成电路基本限制的范德华材料

van der Waals Materials for Overcoming Fundamental Limitations in Photonic Integrated Circuitry.

作者信息

Vyshnevyy Andrey A, Ermolaev Georgy A, Grudinin Dmitriy V, Voronin Kirill V, Kharichkin Ivan, Mazitov Arslan, Kruglov Ivan A, Yakubovsky Dmitry I, Mishra Prabhash, Kirtaev Roman V, Arsenin Aleksey V, Novoselov Kostya S, Martin-Moreno Luis, Volkov Valentyn S

机构信息

Emerging Technologies Research Center, XPANCEO, Dubai Investment Park First, Dubai 00000, United Arab Emirates.

Moscow Center for Advanced Studies, Kulakova str. 20, Moscow 123592, Russia.

出版信息

Nano Lett. 2023 Sep 13;23(17):8057-8064. doi: 10.1021/acs.nanolett.3c02051. Epub 2023 Aug 24.

Abstract

With the advance of on-chip nanophotonics, there is a high demand for high-refractive-index and low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with a high refractive index can offer a very advanced alternative. Still, up to now, it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing nanophotonic devices.

摘要

随着片上纳米光子学的发展,对高折射率和低损耗材料有很高的需求。目前,这项技术以硅为主导,但具有高折射率的范德华(vdW)材料可以提供一种非常先进的替代方案。然而,到目前为止,垂直于层的光学各向异性是否可能成为vdW纳米光子学发展的阻碍因素尚不清楚。在这里,我们研究了基于WS的波导的光学特性,特别是可能的串扰距离。令人惊讶的是,我们发现垂直于原子层方向的低折射率改善了此类器件的特性,这主要是由于扩大了能够实现单模传播的参数范围。因此,在设计纳米光子器件时,使用各向异性材料提供了新的机会和新颖的控制旋钮。

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