Suppr超能文献

耦合至六方氮化硼波导的二硒化钨发光器件。

WSe Light-Emitting Device Coupled to an h-BN Waveguide.

作者信息

Khelifa Ronja, Shan Shengyu, Moilanen Antti J, Taniguchi Takashi, Watanabe Kenji, Novotny Lukas

机构信息

Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland.

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.

出版信息

ACS Photonics. 2023 Mar 23;10(5):1328-1333. doi: 10.1021/acsphotonics.2c01963. eCollection 2023 May 17.

Abstract

Optical information processing using photonic integrated circuits is a key goal in the field of nanophotonics. Extensive research efforts have led to remarkable progress in integrating active and passive device functionalities within one single photonic circuit. Still, to date, one of the central components, i.e., light sources, remain a challenge to be integrated. Here, we focus on a photonic platform that is solely based on two-dimensional materials to enable the integration of electrically contacted optoelectronic devices inside the light-confining dielectric of photonic structures. We combine light-emitting devices, based on exciton recombination in transition metal dichalcogenides, with hexagonal boron nitride photonic waveguides in a single van der Waals heterostructure. Waveguide-coupled light emission is achieved by sandwiching the light-emitting device between two hexagonal boron nitride slabs and patterning the complete van der Waals stack into a photonic structure. Our demonstration of on-chip light generation and waveguiding is a key component for future integrated van der Waals optoelectronics.

摘要

利用光子集成电路进行光学信息处理是纳米光子学领域的一个关键目标。大量的研究工作已在将有源和无源器件功能集成于单个光子电路方面取得了显著进展。然而,迄今为止,核心组件之一,即光源,仍是一个有待集成的挑战。在此,我们专注于一个完全基于二维材料的光子平台,以实现电接触光电器件在光子结构的光限制电介质内部的集成。我们将基于过渡金属二卤化物中激子复合的发光器件与六方氮化硼光子波导组合在单个范德华异质结构中。通过将发光器件夹在两个六方氮化硼平板之间,并将完整的范德华堆叠图案化为光子结构,实现了波导耦合发光。我们对片上光产生和波导的演示是未来集成范德华光电子学的一个关键组件。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验