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通过表面能调节和模板剥离工艺优化用于高性能氧化物-金属-氧化物柔性透明电极的超薄 Ag 薄膜。

Optimizing ultrathin Ag films for high performance oxide-metal-oxide flexible transparent electrodes through surface energy modulation and template-stripping procedures.

机构信息

Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

出版信息

Sci Rep. 2017 Mar 14;7:44576. doi: 10.1038/srep44576.

Abstract

Among new flexible transparent conductive electrode (TCE) candidates, ultrathin Ag film (UTAF) is attractive for its extremely low resistance and relatively high transparency. However, the performances of UTAF based TCEs critically depend on the threshold thickness for growth of continuous Ag films and the film morphologies. Here, we demonstrate that these two parameters could be strongly altered through the modulation of substrate surface energy. By minimizing the surface energy difference between the Ag film and substrate, a 9 nm UTAF with a sheet resistance down to 6.9 Ω sq can be obtained using an electron-beam evaporation process. The resultant UTAF is completely continuous and exhibits smoother morphologies and smaller optical absorbances in comparison to the counterpart of granular-type Ag film at the same thickness without surface modulation. Template-stripping procedure is further developed to transfer the UTAFs to flexible polymer matrixes and construct AlO/Ag/MoO (AAM) electrodes with excellent surface morphology as well as optical and electronic characteristics, including a root-mean-square roughness below 0.21 nm, a transparency up to 93.85% at 550 nm and a sheet resistance as low as 7.39 Ω sq. These AAM based electrodes also show superiority in mechanical robustness, thermal oxidation stability and shape memory property.

摘要

在新兴的柔性透明导电电极 (TCE) 候选材料中,超薄 Ag 薄膜 (UTAF) 因其极低的电阻和相对较高的透明度而备受关注。然而,基于 UTAF 的 TCE 的性能严重依赖于连续 Ag 薄膜生长的阈值厚度和薄膜形态。在这里,我们证明这两个参数可以通过调节基底表面能来强烈改变。通过最小化 Ag 薄膜和基底之间的表面能差异,可以使用电子束蒸发工艺获得厚度低至 6.9 Ω sq 的 9nm UTAF。与没有表面调制的相同厚度的颗粒状 Ag 薄膜相比,所得的 UTAF 是完全连续的,具有更光滑的形态和更小的光学吸收率。进一步开发了模板剥离工艺,将 UTAFs 转移到柔性聚合物基质上,并构建了具有优异表面形貌以及光学和电子特性的 AlO/Ag/MoO (AAM) 电极,包括均方根粗糙度低于 0.21nm、550nm 时透光率高达 93.85%以及方阻低至 7.39Ω sq。这些基于 AAM 的电极在机械鲁棒性、热氧化稳定性和形状记忆性能方面也表现出优势。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53b4/5349598/190644ec1c73/srep44576-f1.jpg

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