Kim Taekham, Lim Doohyeok, Son Jaemin, Cho Kyoungah, Kim Sangsig
Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.
Nanotechnology. 2022 Jul 19;33(41). doi: 10.1088/1361-6528/ac7dae.
In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p-i-nsilicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate induce virtual electrostatic doping in the SiNW channel. The polarity gates are electrically connected to each other and program the channel type, while the control gate modulates the flow of charge carriers in the SiNW channel. The SiNW RFET features simple device design, symmetrical electrical characteristics in the n- and p-channel operation modes using p-i-ndiode characteristics, and both operation modes exhibit high ON/OFF ratios (∼10) and high ON currents (∼1Am). The proposed device is demonstrated experimentally using a fully CMOS-compatible top-down processes.
在本研究中，我们对由p-i-n硅纳米线（SiNW）制成的三顶栅场效应晶体管（FET）进行了可重构的n沟道和p沟道操作。在可重构FET（RFET）中，两个极性栅和一个控制栅在SiNW沟道中诱导虚拟静电掺杂。极性栅相互电连接并对沟道类型进行编程，而控制栅调制SiNW沟道中载流子的流动。SiNW RFET具有简单的器件设计，利用p-i-n二极管特性在n沟道和p沟道操作模式下具有对称的电学特性，并且两种操作模式均表现出高的开/关比（10）和高开电流（1Am）。所提出的器件通过完全与CMOS兼容的自上而下工艺进行了实验验证。
