de Paiva Aline Bastos, Wengenroth Silva Rafael Schio, de Godoy Marcio Peron Franco, Bolaños Vargas Luis Miguel, Peres Marcelos Lima, Soares Demétrio A W, Lopez-Richard Victor
Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, SP, Brazil.
Instituto de Física e Química, Universidade Federal de Itajuba, Itajubá, MG, Brazil.
J Chem Phys. 2022 Jul 7;157(1):014704. doi: 10.1063/5.0097470.
Despite the widespread emergence of memory effects in solid systems, understanding the basic microscopic mechanisms that trigger them is still puzzling. We report how ingredients of solid state transport in polycrystalline systems, such as semiconductor oxides, become sufficient conditions for a memristive response that points to the natural emergence of memory, discernible under an adequate set of driving inputs. The experimental confirmation of these trends will be presented along with a compact analytical theoretical picture that allows discerning the relative contribution of the main building blocks of memory and the effect of temperature, in particular. These findings can be extended to a vast universe of materials and devices, providing a unified physical explanation for a wide class of resistive memories and pinpointing the optimal driving configurations for their operation.
尽管记忆效应在固态系统中广泛出现，但理解引发这些效应的基本微观机制仍然是一个难题。我们报告了多晶系统（如半导体氧化物）中固态输运的成分如何成为忆阻响应的充分条件，这种忆阻响应指向记忆的自然出现，在一组适当的驱动输入下是可辨别的。将展示这些趋势的实验证实以及一个紧凑的解析理论图景，该图景尤其能够辨别记忆主要组成部分的相对贡献以及温度的影响。这些发现可以扩展到大量的材料和器件，为广泛的一类电阻式存储器提供统一的物理解释，并确定其运行的最佳驱动配置。
