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记忆发射体的出现。

The Emergence of Mem-Emitters.

作者信息

Lopez-Richard Victor, Filgueira E Silva Igor Ricardo, Ames Alessandra, Sousa Frederico B, Teodoro Marcio Daldin, Barcelos Ingrid David, de Oliveira Raphaela, Cadore Alisson R

机构信息

Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo, Brazil.

Brazilian Synchrotron Light Laboratory (LNLS), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo 13083-100, Brazil.

出版信息

Nano Lett. 2025 Feb 5;25(5):1816-1822. doi: 10.1021/acs.nanolett.4c04586. Epub 2024 Dec 6.

DOI:10.1021/acs.nanolett.4c04586
PMID:39643593
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11803706/
Abstract

The advent of memristors and resistive switching has transformed solid-state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that manipulate light-emission properties of semiconductors to achieve memory functionalities. Mem-emitters, influenced by past exposure to stimuli, offer a new approach to optoelectronic computing with potential for enhanced speed, efficiency, and integration. This study explores the unique properties of transition-metal dichalcogenide-based heterostructures as a promising platform for Mem-emitter functionalities because of their atomic-scale thickness, tunable electronic properties, and strong light-matter interaction. When distinguishing between population-driven and transition rate-driven Mem-emitters, we highlight their potential for various applications, including optoelectronic switches, variable light sources, and advanced communication systems. Understanding these mechanisms paves the way for innovative technologies in memory and computation, providing insights into the intrinsic dynamics of complex systems.

摘要

忆阻器和电阻开关的出现改变了固态物理学,推动了诸如神经形态计算等先进应用的发展。受这些进展的启发,我们引入了忆发光器的概念,即通过操纵半导体的发光特性来实现存储功能的器件。忆发光器受过去刺激暴露的影响,为光电计算提供了一种新方法,具有提高速度、效率和集成度的潜力。本研究探索了基于过渡金属二硫属化物的异质结构作为忆发光器功能的有前景平台的独特性质,因为它们具有原子尺度的厚度、可调节的电子特性以及强烈的光与物质相互作用。在区分载流子驱动和跃迁速率驱动的忆发光器时,我们强调了它们在各种应用中的潜力,包括光电开关、可变光源和先进通信系统。理解这些机制为存储和计算方面的创新技术铺平了道路,为深入了解复杂系统的内在动力学提供了见解。

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引用本文的文献

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ACS Energy Lett. 2025 Jul 11;10(8):3729-3734. doi: 10.1021/acsenergylett.5c01369. eCollection 2025 Aug 8.
2
Enhanced Photoluminescence in a Neuromorphic 2D Memitter Based on WS via Plasmonic Nanoparticle Self-Assembly.基于表面等离子体纳米粒子自组装的二维神经形态发射体(基于WS)中的增强光致发光。
ACS Appl Mater Interfaces. 2025 Jun 18;17(24):35695-35704. doi: 10.1021/acsami.5c03059. Epub 2025 Jun 5.
3
Optical Memory in a MoSe/Clinochlore Device.

本文引用的文献

1
Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane.通过单层过渡金属二硫属化物与钙钛矿氧化物膜之间的异质界面处的铁电极化调节激子发射
Nano Lett. 2024 Jul 24;24(29):8948-8955. doi: 10.1021/acs.nanolett.4c01853. Epub 2024 Jul 12.
2
Photo-switching operation of MoSfield effect transistor by photoisomerization of azobenzene in solution delivered on a microfluidic platform.通过微流控平台上溶液中偶氮苯的光异构化实现的金属氧化物半导体场效应晶体管的光开关操作。
Nanotechnology. 2024 Jul 12;35(39). doi: 10.1088/1361-6528/ad5dc0.
3
钼硒/斜绿泥石器件中的光学记忆
ACS Appl Mater Interfaces. 2025 Feb 26;17(8):12818-12826. doi: 10.1021/acsami.4c19337. Epub 2025 Feb 13.
Ultrafast Coherent Exciton Couplings and Many-Body Interactions in Monolayer WS.
单层WS₂中的超快相干激子耦合与多体相互作用
Nano Lett. 2024 Jul 3;24(26):8117-8125. doi: 10.1021/acs.nanolett.4c01991. Epub 2024 Jun 20.
4
Disentangling doping and strain effects at defects of grown MoS monolayers with nano-optical spectroscopy.利用纳米光学光谱法解析生长的MoS单层缺陷处的掺杂和应变效应。
Nanoscale. 2024 Jul 11;16(27):12923-12933. doi: 10.1039/d4nr00837e.
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The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS heterojunction: a first-principles study.点缺陷类型、位置和密度对Au/MoS异质结肖特基势垒高度的影响:第一性原理研究
Sci Rep. 2022 Oct 26;12(1):18001. doi: 10.1038/s41598-022-22913-7.
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Electrostatic control of photoluminescence from A and B excitons in monolayer molybdenum disulfide.单层二硫化钼中A和B激子光致发光的静电控制
Nanoscale Adv. 2022 Apr 23;4(11):2484-2493. doi: 10.1039/d2na00071g. eCollection 2022 May 31.
7
Temperature, detriment, or advantage for memory emergence: The case of ZnO.温度、对记忆形成的损害或益处:以氧化锌为例。
J Chem Phys. 2022 Jul 7;157(1):014704. doi: 10.1063/5.0097470.
8
Memristive technologies for data storage, computation, encryption, and radio-frequency communication.忆阻器技术在数据存储、计算、加密和射频通信中的应用。
Science. 2022 Jun 3;376(6597):eabj9979. doi: 10.1126/science.abj9979.
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Integrated Memory Devices Based on 2D Materials.基于二维材料的集成存储器件。
Adv Mater. 2022 Dec;34(48):e2201880. doi: 10.1002/adma.202201880. Epub 2022 Oct 13.
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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications.忆阻器件中的量子电导:基础、进展与应用
Adv Mater. 2022 Aug;34(32):e2201248. doi: 10.1002/adma.202201248. Epub 2022 Jul 1.