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摩擦纳米发电机驱动的PrCaMnO薄膜的自供电电阻开关特性

Self-Powered Resistance-Switching Properties of PrCaMnO Film Driven by Triboelectric Nanogenerator.

作者信息

Huang Yanzi, Wan Lingyu, Jiang Jiang, Li Liuyan, Zhai Junyi

机构信息

Center on Nano-Energy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.

CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.

出版信息

Nanomaterials (Basel). 2022 Jun 27;12(13):2199. doi: 10.3390/nano12132199.

DOI:10.3390/nano12132199
PMID:35808035
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9268256/
Abstract

As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications. In this work, we have developed a self-powered RRAM that consists of a PrCaMnO (PCMO) film and a triboelectric nanogenerator (TENG). With a traditional power supply, the resistance switch ratio achieves the highest switching ratio reported so far, 9 × 10. By converting the mechanical energy harvested by a TENG into electrical energy to power the PCMO film, we demonstrate self-powered resistance-switching induced by mechanical movement. The prepared PCMO shows excellent performance of resistance switching driven by the TENG, and the resistance switch ratio is up to 2 × 10, which is higher than the ones ever reported. In addition, it can monitor real-time mechanical changes and has a good response to the electrical signals of different waveforms. This self-powered resistance switching can be induced by random movements based on the TENG. It has potential applications in the fields of self-powered sensors and human-machine interaction.

摘要

作为一种很有前景的非易失性存储器(NVM),电阻式随机存取存储器(RRAM)已引起广泛关注。传统的RRAM在很大程度上依赖外部电源来引发电阻切换,这限制了其应用。在这项工作中,我们开发了一种由PrCaMnO(PCMO)薄膜和摩擦纳米发电机(TENG)组成的自供电RRAM。在使用传统电源时,电阻开关比达到了目前报道的最高开关比,即9×10。通过将TENG收集的机械能转化为电能来为PCMO薄膜供电,我们展示了由机械运动引起的自供电电阻切换。制备的PCMO在TENG驱动下表现出优异的电阻切换性能,电阻开关比高达2×10,高于以往报道的数值。此外,它可以监测实时机械变化,并对不同波形的电信号有良好的响应。这种自供电电阻切换可以由基于TENG的随机运动引发。它在自供电传感器和人机交互领域具有潜在应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/6f3ee083383d/nanomaterials-12-02199-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/6b8e2b124021/nanomaterials-12-02199-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/15dffc92ec1e/nanomaterials-12-02199-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/2d1b086c66e5/nanomaterials-12-02199-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/21b82790f906/nanomaterials-12-02199-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/6f3ee083383d/nanomaterials-12-02199-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/6b8e2b124021/nanomaterials-12-02199-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/15dffc92ec1e/nanomaterials-12-02199-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/2d1b086c66e5/nanomaterials-12-02199-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/21b82790f906/nanomaterials-12-02199-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ac0b/9268256/6f3ee083383d/nanomaterials-12-02199-g005.jpg

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本文引用的文献

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