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锗薄层中空穴量子比特自旋态的密度泛函理论分析

DFT Analysis of Hole Qubits Spin State in Germanium Thin Layer.

作者信息

Chibisov Andrey, Aleshin Maxim, Chibisova Mary

机构信息

Computing Center, Far Eastern Branch of the Russian Academy of Sciences, 680000 Khabarovsk, Russia.

出版信息

Nanomaterials (Basel). 2022 Jun 29;12(13):2244. doi: 10.3390/nano12132244.

Abstract

Due to the presence of a strong spin-orbit interaction, hole qubits in germanium are increasingly being considered as candidates for quantum computing. These objects make it possible to create electrically controlled logic gates with the basic properties of scalability, a reasonable quantum error correction, and the necessary speed of operation. In this paper, using the methods of quantum-mechanical calculations and considering the non-collinear magnetic interactions, the quantum states of the system 2D structure of Ge in the presence of even and odd numbers of holes were investigated. The spatial localizations of hole states were calculated, favorable quantum states were revealed, and the magnetic structural characteristics of the system were analyzed.

摘要

由于存在强自旋轨道相互作用,锗中的空穴量子比特越来越被视为量子计算的候选对象。这些对象使得创建具有可扩展性、合理的量子纠错能力和必要运算速度等基本特性的电控逻辑门成为可能。本文采用量子力学计算方法并考虑非共线磁相互作用,研究了存在偶数和奇数个空穴时锗二维结构系统的量子态。计算了空穴态的空间定位,揭示了有利的量子态,并分析了该系统的磁结构特征。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/674b/9268541/fd48fa0e823d/nanomaterials-12-02244-g001.jpg

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