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平面锗空穴量子比特在电场和磁场中的建模。

Modeling of planar germanium hole qubits in electric and magnetic fields.

作者信息

Wang Chien-An, Ercan H Ekmel, Gyure Mark F, Scappucci Giordano, Veldhorst Menno, Rimbach-Russ Maximilian

机构信息

QuTech and Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands.

Electrical and Computer Engineering Department, University of California, Los Angeles, California 90095 USA.

出版信息

npj Quantum Inf. 2024;10(1):102. doi: 10.1038/s41534-024-00897-8. Epub 2024 Oct 17.

DOI:10.1038/s41534-024-00897-8
PMID:39429902
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11486654/
Abstract

Hole-based spin qubits in strained planar germanium quantum wells have received considerable attention due to their favorable properties and remarkable experimental progress. The sizeable spin-orbit interaction in this structure allows for efficient qubit operations with electric fields. However, it also couples the qubit to electrical noise. In this work, we perform simulations of a heterostructure hosting these hole spin qubits. We solve the effective mass equations for a realistic heterostructure, provide a set of analytical basis wavefunctions, and compute the effective g-factor of the heavy-hole ground state. Our investigations reveal a strong impact of highly excited light-hole states located outside the quantum well on the g-factor. We find that sweet spots, points of operations that are least susceptible to charge noise, for out-of-plane magnetic fields are shifted to impractically large electric fields. However, for magnetic fields close to in-plane alignment, partial sweet spots at low electric fields are recovered. Furthermore, sweet spots with respect to multiple fluctuating charge traps can be found under certain circumstances for different magnetic field alignments. This work will be helpful in understanding and improving the coherence of germanium hole spin qubits.

摘要

由于其良好的特性和显著的实验进展,应变平面锗量子阱中的空穴基自旋量子比特受到了广泛关注。这种结构中可观的自旋 - 轨道相互作用使得利用电场进行高效的量子比特操作成为可能。然而,它也会将量子比特与电噪声耦合。在这项工作中,我们对包含这些空穴自旋量子比特的异质结构进行了模拟。我们求解了一个实际异质结构的有效质量方程,提供了一组解析基波函数,并计算了重空穴基态的有效g因子。我们的研究揭示了量子阱外高度激发的轻空穴态对g因子有强烈影响。我们发现,对于面外磁场,最不易受电荷噪声影响的操作点(即“甜点”)被转移到了不切实际的大电场处。然而,对于接近面内取向的磁场,在低电场下可以恢复部分“甜点”。此外,在某些情况下,针对不同的磁场取向,可以找到相对于多个波动电荷陷阱的“甜点”。这项工作将有助于理解和提高锗空穴自旋量子比特的相干性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/a35c32fcb18b/41534_2024_897_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/6dc6988e22f6/41534_2024_897_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/2958673a0d58/41534_2024_897_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/ca856f5ee49b/41534_2024_897_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/01aa7a566bd8/41534_2024_897_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/2ff5117a8984/41534_2024_897_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/a35c32fcb18b/41534_2024_897_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/6dc6988e22f6/41534_2024_897_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/2958673a0d58/41534_2024_897_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/ca856f5ee49b/41534_2024_897_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/01aa7a566bd8/41534_2024_897_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/2ff5117a8984/41534_2024_897_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/572f/11486654/a35c32fcb18b/41534_2024_897_Fig6_HTML.jpg

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本文引用的文献

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Nat Mater. 2024 Jul;23(7):920-927. doi: 10.1038/s41563-024-01857-5. Epub 2024 May 17.
2
Hole-Spin Driving by Strain-Induced Spin-Orbit Interactions.通过应变诱导自旋轨道相互作用实现空穴-自旋驱动
Phys Rev Lett. 2023 Sep 1;131(9):097002. doi: 10.1103/PhysRevLett.131.097002.
3
Simultaneous single-qubit driving of semiconductor spin qubits at the fault-tolerant threshold.在容错阈值下对半导体自旋量子比特进行同时单量子比特驱动。
Nat Commun. 2023 Jun 19;14(1):3617. doi: 10.1038/s41467-023-39334-3.
4
Reducing charge noise in quantum dots by using thin silicon quantum wells.使用薄硅量子阱降低量子点中的电荷噪声。
Nat Commun. 2023 Mar 13;14(1):1385. doi: 10.1038/s41467-023-36951-w.
5
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device.纳米尺度下锗量子阱中功能型自旋量子位器件的 3D 应变张量的映射。
ACS Appl Mater Interfaces. 2023 Jan 18;15(2):3119-3130. doi: 10.1021/acsami.2c17395. Epub 2023 Jan 4.
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Nat Nanotechnol. 2022 Oct;17(10):1072-1077. doi: 10.1038/s41565-022-01196-z. Epub 2022 Sep 22.
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Phys Rev Lett. 2022 Mar 25;128(12):126803. doi: 10.1103/PhysRevLett.128.126803.
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