Sarkar Surajit, Rahman Farhana Yasmin, Banik Hritinava, Majumdar Swapan, Bhattacharjee Debajyoti, Hussain Syed Arshad
Department of Physics, Thin Film and Nanoscience Laboratory, Suryamaninagar, West Tripura, 799022 Agartala, Tripura, India.
Department of Chemistry, Tripura University, Suryamaninagar, West Tripura, 799022 Agartala, Tripura, India.
Langmuir. 2022 Aug 2;38(30):9229-9238. doi: 10.1021/acs.langmuir.2c01011. Epub 2022 Jul 21.
Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis(di(1-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/Indole1/ITO device from BRS to CRS occurred with a very good memory window (∼10), data retention (5.1 × 10 s), stability (50 days), and device yield (∼ 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.
与双极电阻开关（BRS）器件相比，互补电阻开关（CRS）器件在存储器应用中更具优势，因为它们可以最大限度地减少在具有交叉阵列结构的BRS情况下出现的潜行路径问题。在此，我们报告了1,4 - 双（二（1 - 吲哚 - 3 - 基）甲基）苯（Indole1）分子的CRS行为。我们早期的研究表明，金/ Indole1 /氧化铟锡（ITO）器件在环境条件下表现出BRS。然而，目前的研究表明，当器件暴露于353 K或更高温度时，金/ Indole1 / ITO器件从BRS到CRS发生动态演变，具有非常好的记忆窗口（约10）、数据保持（5.1×10 s）、稳定性（50天）和器件良率（约60%）。这项工作探索了吲哚衍生物在未来超密集电阻式随机存取存储器中的应用可能性。
