基于 Al/ITO 自形成界面的点接触电阻式存储

Point contact resistive switching memory based on self-formed interface of Al/ITO.

机构信息

State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China.

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

出版信息

Sci Rep. 2016 Jul 7;6:29347. doi: 10.1038/srep29347.

DOI:10.1038/srep29347

PMID:27383005

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4935939/

Abstract

Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

摘要

通过直接在铟锡氧化物（ITO）导电玻璃上溅射 Al 电极，实现了点接触电阻式随机存取存储器（RRAM）。室温沉积的 Al/ITO 在初始化过程后表现出非对称双极电阻开关（BRS）行为，诱导出稳定的高电阻状态（HRS）。这可能是由于界面处原位形成了超薄膜（≈4nm）。相比之下，真空退火后的 Al/ITO 器件表现出典型的对称 BRS，无需初始化或电成型过程。这可以归因于界面层（≈9.2nm）的异位增厚，在热处理后实现稳定的 HRS。这项工作表明，活性 Al 电极/ITO 的自形成界面将为构建 RRAM 提供最简单的几何形状。