Sarkar Surajit, Banik Hritinava, Suklabaidya Sudip, Deb Barnali, Majumdar Swapan, Paul Pabitra Kumar, Bhattacharjee Debajyoti, Hussain Syed Arshad
Department of Physics, Jadavpur University, Jadavpur, Kolkata 700032, India.
Langmuir. 2021 Apr 20;37(15):4449-4459. doi: 10.1021/acs.langmuir.0c03629. Epub 2021 Apr 6.
Bipolar resistive switching using organic molecule is very promising for memory applications owing to their advantages, such as simple device structure, low manufacturing cost, stability, and flexibility. Herein we report Langmuir-Blodgett (LB) and spin-coated-film-based bipolar resistive switching devices using organic material 1,4-bis(di(1-indol-3-yl)methyl)benzene (Indole1). The pressure-area per molecule isotherm (π-), Brewster angle microscopy (BAM), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to formulate an idea about the organization and morphology of the organic material onto thin films. On the basis of the device structure and measurement protocol, it is observed that the device made up of Indole1 shows nonvolatile resistive random access memory (RRAM) behavior with a very high memory window (∼10), data sustainability (5400 s), device yield (86.7%), and repeatability. The oxidation-reduction process and electric-field-driven conduction are the keys behind such switching behavior. Because of very good data retention, repeatability, stability, and a high device yield, the switching device designed using compound Indole1 may be a potential candidate for memory applications.
由于具有诸如器件结构简单、制造成本低、稳定性和柔韧性等优点，利用有机分子的双极电阻开关在存储器应用方面非常有前景。在此，我们报道了基于有机材料1,4-双（二（1-吲哚-3-基）甲基）苯（Indole1）的朗缪尔-布洛杰特（LB）和旋涂薄膜双极电阻开关器件。利用每分子压力-面积等温线（π-）、布儒斯特角显微镜（BAM）、原子力显微镜（AFM）和扫描电子显微镜（SEM）来了解有机材料在薄膜上的排列和形态。基于器件结构和测量方案，观察到由Indole1构成的器件表现出非易失性电阻随机存取存储器（RRAM）行为，具有非常高的记忆窗口（约10）、数据可持续性（5400秒）、器件成品率（86.7%）和可重复性。氧化还原过程和电场驱动传导是这种开关行为背后的关键。由于具有非常好的数据保持性、可重复性、稳定性和高器件成品率，使用化合物Indole1设计的开关器件可能是存储器应用的潜在候选者。
