Luo Bingwei, Cao Lili, Gao Hongli, Zhang Zhiwei, Luo Fei, Zhou Haitao, Ma Kexin, Liu Dabo, Miao Min
Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing 100192, China.
Beijing Institute of Aeronautical Materials, Aero Engine Corporation of China, Beijing 100095, China.
ACS Appl Mater Interfaces. 2022 Aug 10;14(31):36258-36267. doi: 10.1021/acsami.2c09907. Epub 2022 Jul 26.
Indium tin oxide (ITO) thin films suffer from poor chemical stability at high temperatures because of the instability of point defects and structural variations. An interface design strategy was proposed herein to improve this situation, where a robust ITO-based thin film with a column-layer structure was fabricated. Three types of column-layer ITO thin films were fabricated via magnetron sputtering. By tuning the interfaces, we controlled the effective mass and weighted mobility, enhancing the electrical conductivity (2.17 × 10 S m) and power factor (1138 μW m K). The crack propagation path was prolonged because of the profuse interfaces between the columns and layers in the alternate thin films. Thus, enhanced nanohardness (16.5 GPa) was obtained. The structural evolution and performance of the column-layer ITO thin films annealed under different conditions were investigated. The atoms were restricted by the profuse interfaces, resulting in high-temperature stability. The results demonstrate that the interface design of ITO thin films can efficiently modify the stability of conductive ceramics over a wide temperature range, which has significant potential for applications in microdevices and aero engines.
由于点缺陷的不稳定性和结构变化，氧化铟锡（ITO）薄膜在高温下化学稳定性较差。本文提出了一种界面设计策略来改善这种情况，即制备一种具有柱状层结构的坚固的基于ITO的薄膜。通过磁控溅射制备了三种类型的柱状层ITO薄膜。通过调整界面，我们控制了有效质量和加权迁移率，提高了电导率（2.17×10 S m）和功率因数（1138 μW m K）。由于交替薄膜中柱体和层之间存在大量界面，裂纹扩展路径得以延长。因此，获得了增强的纳米硬度（16.5 GPa）。研究了在不同条件下退火的柱状层ITO薄膜的结构演变和性能。原子受到大量界面的限制，从而导致高温稳定性。结果表明，ITO薄膜的界面设计可以在很宽的温度范围内有效地改善导电陶瓷的稳定性，这在微器件和航空发动机中具有巨大的应用潜力。
