Yun Jonghyeon, Kim Daewon
Department of Electronics and Information Convergence Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea.
Institute for Wearable Convergence Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea.
Polymers (Basel). 2022 Jul 24;14(15):2995. doi: 10.3390/polym14152995.
In an era of rapidly evolving artificial intelligence and 5G communications technologies, massive data storage and processing are required for the real-time operation of digital processors in conventional wearable devices. However, classical von-Neumann architecture computers are limited by bottleneck-related issues. As a solution, resistive random-access memory (RRAM) devices are being considered as next generation in-memory computing devices. Among various materials, a polydopamine (PDA) is an attractive candidate for the fabrication of wearable and flexible RRAM devices. Herein, an aluminum/PDA/aluminum structure is proposed to investigate the influence of the PDA layer on resistive switching. The resistance-switching characteristics of an Al/PDA/Al structure are investigated by changing the PDA's coating time and an on/off ratio of 2.48 × 10 is recorded. X-ray photoelectron spectroscopy reveals the presence of an AlO layer in Al/PDA/Al structure, and the contents of oxygen vacancies are changed according to PDA coating time. Conductive filaments in the PDA/Al structure are confirmed by conductive atomic-force microscopy. As an application, a flexible Al/PDA/Al structure is fabricated using polyethylene terephthalate substrate and its operation is successfully confirmed. These results describe the resistive-switching characteristics, including oxygen vacancies, of Al/PDA/Al structures and provide new ways of understanding the resistive-switching mechanism of PDA-based RRAM devices.
在人工智能和5G通信技术快速发展的时代，传统可穿戴设备中的数字处理器实时运行需要海量数据存储和处理。然而，经典的冯·诺依曼架构计算机受到与瓶颈相关问题的限制。作为一种解决方案，电阻式随机存取存储器（RRAM）器件正被视为下一代内存计算设备。在各种材料中，聚多巴胺（PDA）是制造可穿戴和柔性RRAM器件的有吸引力的候选材料。在此，提出了一种铝/聚多巴胺/铝结构来研究聚多巴胺层对电阻开关的影响。通过改变聚多巴胺的涂覆时间来研究铝/聚多巴胺/铝结构的电阻开关特性，并记录到开/关比为2.48×10。X射线光电子能谱揭示了铝/聚多巴胺/铝结构中存在AlO层，并且氧空位的含量根据聚多巴胺涂覆时间而变化。通过导电原子力显微镜证实了聚多巴胺/铝结构中的导电细丝。作为应用，使用聚对苯二甲酸乙二酯基板制造了柔性铝/聚多巴胺/铝结构，并成功证实了其运行。这些结果描述了铝/聚多巴胺/铝结构的电阻开关特性，包括氧空位，并为理解基于聚多巴胺的RRAM器件的电阻开关机制提供了新途径。
