Dubrovskii Vladimir G
Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia.
Nanomaterials (Basel). 2022 Jul 30;12(15):2632. doi: 10.3390/nano12152632.
An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author's knowledge, have not yet been considered. It is shown that MOCVD growth is influenced by an additional current into the nanowires originating from group III atoms reflected from an inert substrate and the upper limit for the group III current per nanowire given by the total group III flow and the array pitch. The model fits the data on the growth kinetics of Au-catalyzed and catalyst-free III-V nanowires quite well and should be useful for understanding and controlling the MOCVD nanowire growth in general.
本文提出了一种用于在图案化衬底上通过金属有机化学气相沉积（MOCVD）在规则阵列中生长III-V族纳米线的分析模型。据作者所知，该模型考虑了一些尚未被考虑的新特性。结果表明，MOCVD生长受到源自惰性衬底反射的III族原子进入纳米线的额外电流以及由III族总流量和阵列间距给出的每根纳米线III族电流上限的影响。该模型与金催化和无催化剂的III-V族纳米线生长动力学数据拟合得很好，总体上对于理解和控制MOCVD纳米线生长应该是有用的。
