• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

砷化镓纳米线生长和晶体结构的模拟。

Simulation of GaAs Nanowire Growth and Crystal Structure.

机构信息

Solid State Physics and NanoLund , Lund University , P.O. Box 118, Lund 22100 , Sweden.

Centre for Analysis and Synthesis , Lund University , P.O. Box 124, Lund 22100 , Sweden.

出版信息

Nano Lett. 2019 Feb 13;19(2):1197-1203. doi: 10.1021/acs.nanolett.8b04637. Epub 2019 Jan 10.

DOI:10.1021/acs.nanolett.8b04637
PMID:30618259
Abstract

Growing GaAs nanowires with well-defined crystal structures is a challenging task, but may be required for the fabrication of future devices. In terms of crystal phase selection, the connection between theory and experiment is limited, leaving experimentalists with a trial and error approach to achieve the desired crystal structures. In this work, we present a modeling approach designed to provide the missing connection, combining classical nucleation theory, stochastic simulation, and mass transport through the seed particle. The main input parameters for the model are the flows of the growth species and the temperature of the process, giving the simulations the same flexibility as experimental growth. The output of the model can also be directly compared to experimental observables, such as crystal structure of each bilayer throughout the length of the nanowire and the composition of the seed particle. The model thus enables for observed experimental trends to be directly explored theoretically. Here, we use the model to simulate nanowire growth with varying As flows, and our results match experimental trends with a good agreement. By analyzing the data from our simulation, we find theoretical explanations for these experimental results, providing new insights into how the crystal structure is affected by the experimental parameters available for growth.

摘要

生长具有明确晶体结构的 GaAs 纳米线是一项具有挑战性的任务,但对于未来器件的制造可能是必需的。在晶体相选择方面,理论与实验之间的联系有限,这使得实验人员只能通过反复试验来实现所需的晶体结构。在这项工作中,我们提出了一种建模方法,旨在提供缺失的联系,将经典成核理论、随机模拟和通过种子颗粒的质量传输结合起来。该模型的主要输入参数是生长物质的流动和过程的温度,这使得模拟具有与实验生长相同的灵活性。模型的输出也可以直接与实验可观察量进行比较,例如纳米线整个长度上每个双层的晶体结构和种子颗粒的组成。因此,该模型可以直接从理论上探索观察到的实验趋势。在这里,我们使用该模型模拟了具有不同 As 流量的纳米线生长,我们的结果与实验趋势吻合得很好。通过分析我们模拟的数据,我们找到了这些实验结果的理论解释,为晶体结构如何受实验可生长参数的影响提供了新的见解。

相似文献

1
Simulation of GaAs Nanowire Growth and Crystal Structure.砷化镓纳米线生长和晶体结构的模拟。
Nano Lett. 2019 Feb 13;19(2):1197-1203. doi: 10.1021/acs.nanolett.8b04637. Epub 2019 Jan 10.
2
Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.同时生长纤锌矿和闪锌矿纳米线。
Nano Lett. 2019 Apr 10;19(4):2723-2730. doi: 10.1021/acs.nanolett.9b01007. Epub 2019 Mar 26.
3
Silver as Seed-Particle Material for GaAs Nanowires--Dictating Crystal Phase and Growth Direction by Substrate Orientation.用于砷化镓纳米线的银作为籽晶颗粒材料——通过衬底取向决定晶相和生长方向
Nano Lett. 2016 Apr 13;16(4):2181-8. doi: 10.1021/acs.nanolett.5b04218. Epub 2016 Apr 1.
4
Crystal structure tuning in GaAs nanowires using HCl.使用 HCl 调整 GaAs 纳米线的晶体结构。
Nanoscale. 2014 Jul 21;6(14):8257-64. doi: 10.1039/c4nr00991f.
5
New mode of vapor-liquid-solid nanowire growth.新的汽-液-固纳米线生长模式。
Nano Lett. 2011 Mar 9;11(3):1247-53. doi: 10.1021/nl104238d. Epub 2011 Feb 23.
6
Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.利用基本生长参数实现闪锌矿和纤锌矿 III-V 纳米线的相完美。
Nano Lett. 2010 Mar 10;10(3):908-15. doi: 10.1021/nl903688v.
7
Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.自催化 GaAs 纳米线中三相线位移引起的结构相变的证据。
Nano Lett. 2012 Oct 10;12(10):5436-42. doi: 10.1021/nl303323t. Epub 2012 Sep 18.
8
Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.基于砷化镓纳米线的纯相与混合晶相的偏振二次谐波成像。
Nano Lett. 2016 Oct 12;16(10):6290-6297. doi: 10.1021/acs.nanolett.6b02592. Epub 2016 Sep 28.
9
Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.通过控制晶体相,从单个半导体纳米线中获得平行和垂直偏振的光致发光。
Nano Lett. 2010 Aug 11;10(8):2927-33. doi: 10.1021/nl101087e.
10
Sb Incorporation in Wurtzite and Zinc Blende InAs Sb Branches on InAs Template Nanowires.锑在砷化铟模板纳米线上的纤锌矿型和闪锌矿型砷化铟锑分支中的掺入。
Small. 2018 Mar;14(11):e1703785. doi: 10.1002/smll.201703785. Epub 2018 Jan 29.

引用本文的文献

1
Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopy.利用原位透射电子显微镜通过微加热器控制纳米线的晶相工程
Small Methods. 2025 Jan;9(1):e2400728. doi: 10.1002/smtd.202400728. Epub 2024 Sep 23.
2
Diameter Control of GaSb Nanowires Revealed by Environmental Transmission Electron Microscopy.环境透射电子显微镜揭示的GaSb纳米线直径控制
J Phys Chem Lett. 2023 Aug 24;14(33):7404-7410. doi: 10.1021/acs.jpclett.3c01928. Epub 2023 Aug 11.
3
An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires.
III-V族三元纳米线成分控制的建模方法概述
Nanomaterials (Basel). 2023 May 17;13(10):1659. doi: 10.3390/nano13101659.
4
Simulating Vapor-Liquid-Solid Growth of Au-Seeded InGaAs Nanowires.模拟金籽晶铟镓砷纳米线的气-液-固生长
ACS Nanosci Au. 2022 Feb 7;2(3):239-249. doi: 10.1021/acsnanoscienceau.1c00052. eCollection 2022 Jun 15.
5
Direct Observations of Twin Formation Dynamics in Binary Semiconductors.二元半导体中孪晶形成动力学的直接观测。
ACS Nanosci Au. 2021 Nov 4;2(1):49-56. doi: 10.1021/acsnanoscienceau.1c00021. eCollection 2022 Feb 16.
6
Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires.III-V族半导体纳米线中晶相量子点的外延生长。
Nanoscale Adv. 2023 Mar 6;5(7):1890-1909. doi: 10.1039/d2na00956k. eCollection 2023 Mar 28.
7
Vapor-solid-solid growth dynamics in GaAs nanowires.砷化镓纳米线中的气-固-固生长动力学
Nanoscale Adv. 2021 Aug 5;3(20):5928-5940. doi: 10.1039/d1na00345c. eCollection 2021 Oct 12.
8
Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates.在图案化衬底上生长Ⅲ-Ⅴ族纳米线的金属有机化学气相沉积(MOCVD)理论
Nanomaterials (Basel). 2022 Jul 30;12(15):2632. doi: 10.3390/nano12152632.
9
Independent Control of Nucleation and Layer Growth in Nanowires.纳米线成核与层生长的独立控制
ACS Nano. 2020 Apr 28;14(4):3868-3875. doi: 10.1021/acsnano.9b09816. Epub 2020 Feb 21.
10
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth.原位分析金催化 GaAs 纳米线生长过程中催化剂的组成。
Nat Commun. 2019 Oct 8;10(1):4577. doi: 10.1038/s41467-019-12437-6.