Zhang Zhixun, Yang Mingyang, Zhang Yibo, Zhou Ming
State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China.
Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Tsinghua University, Beijing 100084, China.
Nanomaterials (Basel). 2022 Aug 5;12(15):2702. doi: 10.3390/nano12152702.
The terahertz stealth and shielding performance of a new type of two-dimensional material, borophene, has been studied theoretically and experimentally. Studies have shown that borophene materials have good terahertz stealth and shielding properties. First-principles calculations show that compared with single-layer borophene, few-layer borophene has good terahertz stealth and shielding performance in the range of 0.12.7 THz. In the range of 24 layers, the terahertz stealth and shielding performance of few-layer borophene increases with the increase of the number of layers. The finite element simulation calculation results also confirmed this point. Using the few-layer borophene prepared by our research group as a raw material, a PDMS composite was prepared to verify the terahertz stealth and shielding performance of the few-layer borophene. In the ultra-wide frequency range of 0.1~2.7 THz, the electromagnetic shielding effectiveness (EMI SE) of the PDMS material mixed with few-layer borophene can reach 50 dB, and the reflection loss (RL) can reach 35 dB. With the concentration of few-layer borophene increasing, the terahertz stealth and shielding effectiveness of the material is enhanced. In addition, the simultaneous mixing of few-layer borophene and few-layer graphene will make the material exhibit better terahertz stealth and shielding performance compared with mixing separately.
一种新型二维材料硼烯的太赫兹隐身与屏蔽性能已通过理论和实验进行了研究。研究表明,硼烯材料具有良好的太赫兹隐身和屏蔽性能。第一性原理计算表明,与单层硼烯相比,少层硼烯在0.12.7太赫兹范围内具有良好的太赫兹隐身和屏蔽性能。在24层范围内,少层硼烯的太赫兹隐身和屏蔽性能随层数的增加而提高。有限元模拟计算结果也证实了这一点。以本研究小组制备的少层硼烯为原料,制备了聚二甲基硅氧烷(PDMS)复合材料,以验证少层硼烯的太赫兹隐身和屏蔽性能。在0.1~2.7太赫兹的超宽频率范围内,与少层硼烯混合的PDMS材料的电磁屏蔽效能(EMI SE)可达50分贝,反射损耗(RL)可达35分贝。随着少层硼烯浓度的增加,材料的太赫兹隐身和屏蔽效能增强。此外,少层硼烯和少层石墨烯同时混合将使材料比单独混合表现出更好的太赫兹隐身和屏蔽性能。