Integrated Materials Design Lab (IMDL), Research School of Physics and Engineering, The Australian National University, ACT 2601, Australia.
Acta Crystallogr B Struct Sci Cryst Eng Mater. 2022 Aug 1;78(Pt 4):643-664. doi: 10.1107/S2052520622004942. Epub 2022 Jul 15.
Setting out from our recent publication [König & Smith (2021). Acta Cryst. B77, 861], we extend our analytic description of the regular cross sections of zincblende- and diamond-structure nanowires (NWires) by introducing cross section morphing to arbitrary convex shapes featuring linear interfaces as encountered in experiment. To this end, we provide add-on terms to the existing number series with their respective running indices for zinc-blende- (zb-) and diamond-structure NWire cross sections. Such add-on terms to all variables yield the required flexibility for cross section morphing, with main variables presented by the number of NWire atoms N(d[i]), bonds between NWire atoms N(d[i]) and interface bonds N(d[i]). Other basic geometric variables, such as the specific length of interface facets, as well as widths, heights and total area of the cross section, are given as well. The cross sections refer to the six high-symmetry zb NWires with low-index faceting frequently occurring in the bottom-up and top-down approaches of NWire processing. The fundamental insights into NWire structures revealed here offer a universal gauge and thus enable major advancements in data interpretation and the understanding of all zb- and diamond-structure-based NWires with arbitrary convex cross sections. We corroborate this statement with an exact description of irregular Si NWire cross sections and irregular InGaAs/GaAs core-shell NWire cross sections, where a radially changing unit-cell parameter can be included.
从我们最近的出版物[ König & Smith (2021). Acta Cryst. B77, 861]出发,我们通过引入横截面变形来扩展我们对闪锌矿和金刚石结构纳米线(NWires)的规则横截面的分析描述,将其扩展到任意具有线性界面的凸形状,这些形状在实验中遇到。为此,我们为现有的数级数提供了附加项,并为其各自的运行指数提供了锌-(zb-)和金刚石结构 NWire 横截面的附加项。这些附加项到所有变量都为横截面变形提供了所需的灵活性,主要变量由 NWire 原子数量 N(d[i])、NWire 原子之间的键数量 N(d[i])和界面键数量 N(d[i])表示。其他基本几何变量,如界面面的特定长度,以及横截面的宽度、高度和总面积,也给出了。横截面是指在 NWire 处理的自上而下和自下而上方法中经常出现的具有低指数刻面的六个高对称 zb NWires。这里揭示的 NWire 结构的基本见解提供了一个通用的量规,从而能够在数据解释和对所有具有任意凸横截面的 zb-和金刚石结构 NWires 的理解方面取得重大进展。我们通过对不规则 Si NWire 横截面和不规则 InGaAs/GaAs 核壳 NWire 横截面的精确描述来证实这一说法,其中可以包括径向变化的单元参数。