Department of Material Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States.
Nano Lett. 2011 Dec 14;11(12):5465-70. doi: 10.1021/nl203238e. Epub 2011 Nov 29.
Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.
载流子的量子限制对纳米尺度器件的操作有重大影响。我们对光刻制备的亚 5nm 厚硅纳米线场效应晶体管进行了输运分析，结果表明在 300K 时存在量子限制诱导的量子震荡。我们的结果解释了最近在超薄硅纳米线场效应晶体管中观察到的性能增强的基础，并为强限制纳米线器件中载流子迁移率增强的理论预测提供了直接的实验证据。
