Ha Jonghyeon, Lee Gyeongyeop, Bae Hagyoul, Kim Kihyun, Han Jin-Woo, Kim Jungsik
Department of Electrical Engineering, Gyeongsang National University, Jinju 52828, Gyeongnam, Korea.
Division of Electronics Engineering, and Future Semiconductor Convergence Technology Research Center, Jeonbuk National University, Jeonju 54896, Jeonbuk, Korea.
Micromachines (Basel). 2022 Aug 8;13(8):1276. doi: 10.3390/mi13081276.
Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects induced by the fabrication process, whereas displacement damage is induced by terrestrial cosmic radiation. Clustered displacement damage reportedly reduces the on-state current () in ordinary MOSFETs. In the case of an extremely scaled device such as a nanosheet field-effect transistor (NS-FET), the impact of displacement defect size was analyzed on the basis of the NS dimensions related to the device characteristics. In this study, we investigated the effect of displacement defects on NS-FETs using technology computer-aided design; the simulation model included quantum transport effects. The geometrical conditions, temperatures, trap concentrations, and scattering models were considered as the variables for on-state current reduction.
