Pacho Aleo Paolo, Rinio Markus
Department of Engineering and Physics, Karlstad University, Karlstad 651 88, Sweden.
MethodsX. 2022 Aug 8;9:101813. doi: 10.1016/j.mex.2022.101813. eCollection 2022.
Research on the structural defects of silicon such as grain boundaries and dislocations, their spatial distribution and how they impact the resulting solar cell performance often proceed by polishing the sample, etching to reveal the dislocations and grain boundaries, and then scanning the surface to image the defects and record their corresponding positions. While a lot of work has been devoted to developing appropriate etches and how to correlate the etch pits to cell performance, materials pertaining to preparation of samples for defect etching, which is a crucial step to ensure successful imaging and analysis, are limited. This work describes a method of polishing multicrystalline silicon solar cell samples in preparation for defect etching. The method described herein: • Utilizes both mechanical and chemical mechanical polishing. • Can be applied to both fabricated silicon solar cells and as-cut wafers.
关于硅的结构缺陷（如晶界和位错）、它们的空间分布以及它们如何影响最终的太阳能电池性能的研究，通常是通过对样品进行抛光、蚀刻以揭示位错和晶界，然后扫描表面以对缺陷进行成像并记录其相应位置来进行的。虽然已经投入了大量工作来开发合适的蚀刻方法以及如何将蚀坑与电池性能相关联，但有关用于缺陷蚀刻的样品制备材料（这是确保成功成像和分析的关键步骤）却很有限。这项工作描述了一种用于多晶硅太阳能电池样品抛光以准备进行缺陷蚀刻的方法。本文所述方法：• 同时利用机械抛光和化学机械抛光。• 可应用于已制造的硅太阳能电池和切割后的硅片。
