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通过氮掺杂调节NiO薄膜的光学带隙和电学性质:实验与理论联合研究

Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study.

作者信息

Wang Yong, Bruyère Stéphanie, Kumagai Yu, Tsunoda Naoki, Oba Fumiyasu, Ghanbaja Jaafar, Sun Hui, Dai Bo, Pierson Jean-François

机构信息

School of Space Science and Physics, Shandong University Weihai 264209 China.

State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology Mianyang 621010 China.

出版信息

RSC Adv. 2022 Aug 10;12(34):21940-21945. doi: 10.1039/d2ra01887j. eCollection 2022 Aug 4.

Abstract

A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films. Nitrogen addition can significantly enhance the subgap absorption. The molecular state of nitrogen (N) has been identified in these doped thin films by electron energy loss spectroscopy.

摘要

本文提出了一项联合实验与理论研究,以揭示氮掺杂对NiO薄膜光学和电学性质的影响。添加氮可以显著增强带隙以下的吸收。通过电子能量损失谱已确定了这些掺杂薄膜中氮(N)的分子状态。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e91/9364203/e01d70b54e8e/d2ra01887j-f1.jpg

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