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II型外尔半金属NbIrTe中巨大的室温太赫兹拓扑响应

Colossal Room-Temperature Terahertz Topological Response in Type-II Weyl Semimetal NbIrTe.

作者信息

Zhang Jiantian, Zhang Tianning, Yan Luo, Zhu Chao, Shen Wanfu, Hu Chunguang, Lei Hongxiang, Luo Heng, Zhang Daohua, Liu Fucai, Liu Zheng, Tong Jinchao, Zhou Liujiang, Yu Peng, Yang Guowei

机构信息

State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China.

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

出版信息

Adv Mater. 2022 Oct;34(42):e2204621. doi: 10.1002/adma.202204621. Epub 2022 Sep 22.

Abstract

The electromagnetic spectrum between microwave and infrared light is termed the "terahertz (THz) gap," of which there is an urgent lack of feasible and efficient room-temperature (RT) THz detectors. Type-II Weyl semimetals (WSMs) have been predicted to host significant RT topological photoresponses in low-frequency regions, especially in the THz gap, well addressing the shortcomings of THz detectors. However, such devices have not been experimentally realized yet. Herein, a type-II WSM (NbIrTe ) is selected to fabricate THz detector, which exhibits a photoresponsivity of 5.7 × 10  V W and a one-year air stability at RT. Such excellent THz-detection performance can be attributed to the topological effect of type-II WSM in which the effective mass of photogenerated electrons can be reduced by the large tilting angle of Weyl nodes to further improve mobility and photoresponsivity. Impressively, this device shows a giant intrinsic anisotropic conductance (σ /σ  = 339) and THz response (I /I  = 40.9), both of which are record values known. The findings open a new avenue for the realization of uncooled and highly sensitive THz detectors by exploring type-II WSM-based devices.

摘要

微波与红外光之间的电磁波谱被称为“太赫兹(THz)间隙”,目前迫切需要可行且高效的室温(RT)太赫兹探测器。理论预测,II型外尔半金属(WSMs)在低频区域,尤其是在太赫兹间隙中,会呈现出显著的室温拓扑光响应,这很好地解决了太赫兹探测器的缺点。然而,此类器件尚未通过实验实现。在此,选用一种II型WSM(NbIrTe )来制造太赫兹探测器,该探测器在室温下表现出5.7×10 V W的光响应度和为期一年的空气稳定性。如此优异的太赫兹探测性能可归因于II型WSM的拓扑效应,其中外尔节点的大倾斜角可降低光生电子的有效质量,从而进一步提高迁移率和光响应度。令人印象深刻的是,该器件展现出巨大的本征各向异性电导率(σ /σ = 339)和太赫兹响应(I /I = 40.9),这两者均为已知的记录值。这些发现为通过探索基于II型WSM的器件来实现非制冷且高灵敏度的太赫兹探测器开辟了一条新途径。

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