Uniaxial Strain Engineering Core Position Control in CdSe/CdS Core/Shell Nanorods and Their Optical Response.

Anisotropic strain engineering has emerged as a powerful strategy for enhancing the optoelectronic performance of semiconductor nanocrystals. Here, we show that CdSe/CdS dot-in-rod structures offer a platform for fine-tuning the optical response of CdSe quantum dots through anisotropic strain. By controlling the spatial position of the CdSe core within a growing CdS nanorod shell, varying degrees of uniaxial strain can be introduced. Placing CdSe cores at the end of the CdS nanorod induces strong asymmetric compression along the axis of the wurtzite CdSe core, dramatically altering its absorption and emission characteristics, whereas CdSe cores located near the middle of the nanorod experience a comparatively weak uniaxial strain field. The change in absorption and emission spectra and dynamics for highly strained end-position CdSe/CdS nanorods is explained by (1) relative shifting of the valence band light hole and heavy hole levels and (2) introduction of a strong piezoelectric potential, which spatially separates the electron and hole wave functions. The ability to tune the degree of uniaxial strain through core position control in a nanorod structure creates opportunities for precisely modulating the electronic properties of CdSe nanocrystals while simultaneously taking advantage of dielectric and optical anisotropies intrinsic to 1D nanostructures.