Chen H, Verheyen P, De Heyn P, Lepage G, De Coster J, Balakrishnan S, Absil P, Yao W, Shen L, Roelkens G, Van Campenhout J
Opt Express. 2016 Mar 7;24(5):4622-4631. doi: 10.1364/OE.24.004622.
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the C-band and O-band.
我们展示了一种67吉赫兹带宽的硅接触锗波导p-i-n光电探测器，其在-1伏电压下工作，电容为6.8飞法。暗电流低于4纳安。在1550纳米波长处的响应度为0.74安/瓦，在1310纳米波长处为0.93安/瓦。在C波段和O波段均通过清晰的张开眼图展示了56吉比特每秒的开关键控数据接收。
